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參數(shù)資料
| 型號： | 2N5088 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-92, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 30K |
| 代理商： | 2N5088 |
DS21603 Rev. E-3
2 of 2
2N5088/89/MMBT5088/89
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
5088
Max
5088
Min
5089
Max
5089
Unit
Test Condition
Collector to Emitter Breakdown Voltage (Note 3) V(BR)CEO
30—25—
V
IC = 1.0mA, IB = 0
Collector to Base Breakdown Voltage
V(BR)CBO
35—30—
V
IC = 100A, IE = 0
Emitter Cutoff Current
IEBO
—
50
100
—
50
100
nA
VEB(OFF) = 3.0V, IC = 0
VEB(OFF) = 4.5V, IC = 0
Collector Cutoff Current
ICEX
—
50
—
50
nA
VCB = 20V, IE = 0
VCB = 15V, IE = 0
DC Current Gain
(Note 3)
hFE
300
350
300
900
—
400
450
400
1200
—
IC = 100A, VCE = 5.0V
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
(Note 3)
VCE(SAT)
—
0.5
—
0.5
V
IC = 10mA, IB = 1.0mA
Base-Emitter “ON” Voltage (Note 3)
VBE(ON)
—
0.8
—
0.8
V
IC = 10mA, VCE = 5.0V
Collector to Base Capacitance
Ccb
—
4.0
—
4.0
pF
VCB = 5.0V, IE = 0
f = 100kHz
Emitter to Base Capacitance
Ceb
—10—10
pF
VBE = 0.5V, IC = 0
f = 100kHz
Small Signal Current Gain
hfe
350
1400
450
1800
—
IC = 1.0mA, VCE = 5.0V,
f = 1.0kHz
Current Gain Bandwidth Product
fT
50—50—
MHz
IC = 500A, VCE = 5.0V,
RS = 10k
f = 20MHz
Noise Figure
NF
—
3.0
—
2.0
dB
IC = 100A, VCE = 5.0V,
RS = 10k
,
f = 10Hz - 15.7kHz
Notes:
1. Valid provided that leads at a distance of 2.0mm from body are kept at specified ambient (TO-92).
2. Device mounted on FR-4 PCB 40 x 40 x 1.5mm..
3. Pulse test: Pulse width
l 300s, duty cycle l 2%.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5088/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Amplifier Transistor NPN |
| 2N5088_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors NPN Silicon |
| 2N5088_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| 2N5088_D11Z | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5088_D26Z | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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