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參數(shù)資料
| 型號： | 2N5039 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon power Transistor(20A，140W，硅NPN功率晶體管) |
| 中文描述： | 20 A, 75 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2N5039 |
2N5038 2N5039
http://onsemi.com
2
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
300,
μ
s, Duty Cycle
2%.
(I
C
= 200 mAdc, I
B
= 0)
2N5038
90
75
—
Vdc
Collector Cutoff Current
(V
= 110 Vdc, V
= 1.5 V)
(V
CE
= 100 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150 C)
2N5039
2N5038
—
I
CEX
—
50
10
mAdc
EB
C
2N5039
EBO
15
mAdc
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage
(I
C
= 20 Adc, I
B
= 5 Adc)
(I
C
= 10 Adc, V
CE
= 5 Vdc)
2N5039
V
FE
20
—
2.5
100
—
Vdc
Base–Emitter Saturation Voltage
V
BE(sat)
—
3.3
Vdc
Forward Current Transfer Ratio
C
CE
CC
r
C
B1
B2
s
C
B1
B2
f
100
Figure 2. Forward Bias Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5
2
0.1
1
10
100
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
T
C
= 25
°
C
70
1
I
dc
50
20
10
0.5
0.2
2
3
5
7
20
30
50
2N5039
2N5038
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
Second breakdown pulse limits are valid for duty cycles
to 10%. At high case temperatures, thermal limitations may
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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