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參數(shù)資料
| 型號(hào)： | 2N5019 |
| 廠商： | LINEAR INTEGRATED SYSTEMS INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SINGLE P-CHANNEL JFET SWITCH |
| 中文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 封裝： | METAL PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 263K |
| 代理商： | 2N5019 |
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5018
ZERO OFFSET VOLTAGE
LOW ON RESISTANCE
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
75
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
-55 to 200°C
-55 to 200°C
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
500mW
-50mA
30V
30V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
2N5018
MIN
30
-10
2N5019
MIN
30
-5
SYM.
CHARACTERISTIC
TYP
MAX
10
-0.5
2
-10
-10
-2
75
MAX
5
-0.5
2
-10
-10
-2
150
UNITS
CONDITIONS
BV
GSS
V
GS(off)
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
I
G
= 1μA, V
DS
= 0V
V
DS
= -15V, I
D
= -1μA
V
GS
= 0V, I
D
= -6mA
V
GS
= 0V, I
D
= -3mA
V
DS
= -20V, V
GS
= 0V
V
GS
= 15V, V
DS
= 0V
V
DS
= -15V, V
GS
= 12V
V
DS
= -15V, V
GS
= 7V
V
DG
= -15V, I
S
= 0A
I
D
= -1mA, V
GS
= 0V
V
DS(on)
Drain to Source On Voltage
V
I
DSS
I
GSS
Drain to Source Saturation Current
2
Gate Leakage Current
mA
nA
I
D(off)
Drain Cutoff Current
μA
nA
I
DGO
r
DS(on)
Drain Reverse Current
Drain to Source On Resistance
G
S
D
2
1
3
BOTTOM VIEW
TO-18
Linear Integrated Systems
2N5018 SERIES
SINGLE P-CHANNEL
JFET SWITCH
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2N5019_TO-18 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a single P-Channel JFET switch |
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| 2N502 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9 |
| 2N5020 | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:P-Channel Silicon Junction Field-Effect Transistor |
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