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參數(shù)資料
| 型號(hào)： | 2N4928CSM-JQR-BG4 |
| 廠商： | SEMELAB LTD |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC1-3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 17K |
| 代理商： | 2N4928CSM-JQR-BG4 |
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 5884
Issue 1
2N4928CSM
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IC = -10mA
IB = 0
IC = -100AIE = 0
IE = -100AIC = 0
IB = 0
VCB = -50V
IC = 0
VEB = 3V
IC = -10mA
IB = -1mA
IC = -10mA
VCE = -10V
IC = -1mA
VCE = -10V
IC = -10mA
VCE = -10V
IC = -50mA
VCE = -10V
IC = -20mA
VCE = -20V
f = 100MHz
VCB = -20V
IE = 0
f = 140kHz
VBE = -2.0V
IC = 0
f = 140kHz
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
V(BR)CEO* Collector – Emitter Breakdown Voltage
V(BR)CBO* Collector – Base Breakdown Voltage
V(BR)EBO* Emitter – Base Breakdown Voltage
ICBO*
Collector – Base Cut-off Current
IEBO*
Emitter Cut-off Current (IC = 0)
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(ON)
Base – Emitter On Voltage
hFE*
DC Current Gain
fT
Transition Frequency
Ccb
Collector – Base Capacitance
Ceb
Collector – Emitter Capacitance
-100
-4.0
-0.5
-1.0
20
25
200
20
100
1,000
6.0
40
V
A
V
—
MHz
pF
fT is defined as the frequency at which hFE extrapolates to unity.
* Pulse test tp = 300s , δ ≤ 2%
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| 2N492B | 制造商:Solid State Devices Inc (SSDI) 功能描述: |
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