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參數(shù)資料
| 型號(hào)： | 2N4923 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS |
| 中文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225 |
| 封裝： | PLASTIC, CASE 77-09, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | 2N4923 |
NPN SILICON EPITAXIAL TRANSISTOR
2N4923
TO-126
General Purpose Power Transistor
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Base Current
Power Dissipation @ Tc=25 deg C
Derate Above 25 deg C
Operating And Storage Junction
Temperature Range
Lead Temperature for Soldering 1/16"
from Body for 10 Seconds.
Thermal Resistance
Junction to Case
VALUE
80
80
5.0
3.0
1.0
30
0.24
-65 to +150
UNIT
V
V
V
A
A
W
W/deg C
deg C
VCBO
VCEO
VEBO
IC
IB
PD
Tj, Tstg
TL
260
deg C
Rth (j-c)
4.16
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Sustaining Voltage
Collector Cut off Current
SYMBOL
VCEO(sus)
ICEO
ICBO
ICEX
TEST CONDITION
IC=100mA, IB=0
VCE=40V, IB=0
VCB=80V, IE=0
VCB=80V,VEB(0ff)=1.5V
Tc=125 deg C
VCB=80V,VEB(0ff)=1.5V
VEB=5V, IC=0
IC=50mA,VCE=1V
IC=500mA,VCE=1V
IC=1A,VCE=1V
IC=1A, IB=0.1A
IC=1A, IB=0.1A
IC=1A,VCE=1V
MIN
80
-
-
-
TYP
-
-
-
-
MAX
-
0.5
0.1
0.1
UNIT
V
mA
mA
mA
-
-
-
-
-
0.5
1.0
-
150
-
0.6
1.3
1.3
mA
mA
-
Emitter Cut off Current
DC Current Gain
IEBO
hFE *
40
30
10
-
-
-
-
V
V
V
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter on Voltage
DYNAMIC CHARACTERISTICS
Transistors frequency
Output Capacitance
Small Signal Current Gain
*Pulse Test PW=300us, Duty Cycle=2%
VCE(sat)*
VBE(sat)*
VBE(on) *
ft IC=250mA,VCE=10V,f=1MHz
Cob
VCB=10V, IE=0, f=100kHz
hfe
IC=250mA,VCE=10V,f=1kHz
3.0
-
25
-
-
-
-
MHz
pF
100
-
Continental Device India Limited
Data Sheet
Page 1 of 2
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4923 | 制造商:ON Semiconductor 功能描述:TRANSISTOR NPN TO-126 |
| 2N4923G | 功能描述:兩極晶體管 - BJT 3A 80V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4923NSC | 制造商:National Semiconductor 功能描述:2N4923 |
| 2N4924 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 2N4925 | 制造商:Solid State Devices Inc (SSDI) 功能描述:NPN Silicon Transistor TO-39 |
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