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參數(shù)資料
| 型號： | 2N4911 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 封裝： | TO-66, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 136K |
| 代理商： | 2N4911 |
TECHNICAL DATA
NPN SILICON TRANSISTOR
Devices
2N4911
TO-66
Package
Medium Power
Switching and Amplifier Applications
MAXIMUM RATINGS (PER LEG)
Ratings
Symbol
Value
Units
Collector-Emitter Voltage
VCEO
60
Vdc
Collector-Base Voltage
VCB
60
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
Collector Current – Continuous Peak (1)
IC
1.0
Adc
Base Current – Continuous
IB
1.0
Adc
Total Power Dissipation
@ TC = 25
0C
Derate above 250C
PD
25
0.143
Watts
W/0C
Operating and Storage Junction
Tempature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Thermal Resistance – Junction to Case
RθJC
7.0
0C/W
(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle < 10%
ELECTRICAL CHARACTERISTICS (T
C = 25
0C unless otherwise noted)
CHARACTERISTICS
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Systaining Voltage
IC = 0.1 Adc, Ib = 0
VCEO(sus)
60
Vdc
Collector Cutoff Current
VCE = 30 Vdc, IB = 0
VCE = Rated VCB, Vbe off = 1.5 Vdc
ICEO
ICEX
0.5
0.1
mAdc
Collector Cutoff Current
VCE = 90 VCB
VCE = 90 VCB, TC = 150
0
ICES
10
75
VAdc
Emitter Cutoff Current
VBE = 5.0 Vdc, IC = 0
IEBO
1.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
102303
Page 1 of 2
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