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參數(shù)資料
| 型號(hào)： | 2N4859 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-CHANNEL J-FET |
| 中文描述： | 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA |
| 封裝： | TO-18, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 36K |
| 代理商： | 2N4859 |
2N4856JAN/JANTX/JANTXV Series
Vishay Siliconix
Document Number: 70244
S-04028
—
Rev. C, 04-Jun-01
www.vishay.com
7-3
!
Limits
2N4859
2N4860
2N4861
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
=
–
1 A , V
DS
= 0 V
–
55
–
30
–
30
–
30
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 0.5 nA
–
4
–
10
–
2
–
6
–
0.8
–
4
Saturation Drain Current
b
I
DSS
V
DS
= 15 V, V
GS
= 0 V
50
175
20
100
8
80
mA
V
GS
=
–
15 V, V
DS
= 0 V
–
5
–
250
–
250
–
250
pA
Gate Reverse Current
I
GSS
T
A
= 150 C
–
13
–
500
–
500
–
500
nA
Gate Operating Current
c
I
G
V
DG
= 15 V, I
D
= 10 mA
–
5
V
DS
= 15 V, V
GS
=
–
10 V
5
250
250
250
pA
Drain Cutoff Current
I
D(off)
T
A
= 150 C
13
500
500
500
nA
I
D
= 5 mA
0.25
0.5
Drain-Source On-Voltage
V
DS(on)
V
GS
= 0 V
I
D
= 10 mA
0.35
0.5
V
I
D
= 20 mA
0.5
0.75
Drain-Source On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA
25
40
60
Gate-Source Forward Voltage
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
c
g
fs
V
DG
= 20 V, I
= 1 mA
f = 1 kHz
6
mS
Common-Source
Output Conductance
c
g
os
25
S
Common-Source
Input Capacitance
C
iss
V
DS
= 0 V, V
=
–
10 V
f = 1 MHz
7
18
18
18
Common-Source
Reverse Transfer Capacitance
C
rss
3
8
8
8
pF
Equivalent Input
Noise Voltage
c
e
n
V
DG
= 10 V, I
= 10 mA
f = 1 kHz
3
nV
√
Hz
Switching
t
d(on)
2
6
6
10
Turn-On Time
t
r
V
DD
= 10 V, V
= 0 V
See Switching Circuit
2
3
4
10
ns
Turn-Off Time
t
OFF
19
25
50
100
Notes
a.
b.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
100 s duty cycle
10%.
This parameter not registered with JEDEC.
NCB
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| 2N4961 | NPN SILICON TRANSISTORS |
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