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參數(shù)資料
| 型號(hào)： | 2N4449J |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-46 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 534K |
| 代理商： | 2N4449J |
www.SEMICOA.com
2N4449
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA
15
Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 40 Volts
VCB = 32 Volts
VCB = 20 Volts, TA = 150°C
10
0.2
30
A
Collector-Emitter Cutoff Current
ICEX
VCE= 10Volts, VEB= 0.25Volts
TA = 125°C
30
A
Collector-Emitter Cutoff Current
ICES
VCE = 20 Volts
400
nA
Emitter-Base Cutoff Current
IEBO1
IEBO2
VEB = 4.5 Volts
VEB = 4 Volts
10
0.25
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
IC = 10 mA, VCE = 0.35 Volts
IC = 30 mA, VCE = 0.4 Volts
IC = 10 mA, VCE = 1 Volts
IC = 100 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
TA = -55°C
40
30
40
20
120
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
VBEsat3
VBEsat4
VBEsat5
IC = 10 mA, IB = 1 mA
IC = 30 mA, IB = 3 mA
IC = 100 mA, IB = 10 mA
IC= 10mA, IB= 1mA,TA=+125°C
IC= 10mA, IB= 1mA, TA = -55°C
0.70
0.80
0.59
0.85
0.90
1.20
1.02
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
VCEsat3
VCEsat4
IC = 10 mA, IB = 1 mA
IC = 30 mA, IB = 3 mA
IC = 100 mA, IB = 10 mA
IC= 10mA, IB= 1mA,TA=+125°C
0.20
0.25
0.45
0.30
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 10 Volts, IC = 10 mA,
f = 100 MHz
5
10
Open Circuit Output Capacitance
COBO
VCB = 5 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
4
pF
Open Circuit Input Capacitance
CIBO
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
5
pF
Storage Time
ts
IC = 10 mA, IB1=IB2 = 10 mA
13
ns
Saturated Turn-On Time
tON
IC = 10 mA, IB1= 3 mA,
IB2 = 1.5 mA
12
ns
Saturated Turn-Off Time
tOFF
IC = 10 mA, IB1= 3 mA,
IB2 = 1.5 mA
18
ns
Semicoa Corporation
Rev. J
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
Copyright
2010
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