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參數(shù)資料
| 型號： | 2N4416AC1CESASEM |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HERMETIC SEALED PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 579K |
| 代理商： | 2N4416AC1CESASEM |
SILICON SMALL SIGNAL
N-CHANNEL JFET
2N4416AC1
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8384
Issue 1
Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)GSS
Gate – Source
Breakdown Voltage
VDS = 0
IG = -1.0A
-35
VGS(off)
Gate – Source
Cut-off Voltage
VDS = 15V
ID = 1.0nA
-2.5
-6
VGS
Gate – Source Voltage
VDS = 15V
ID = 0.5mA
-1.0
-5.5
V
IDSS
(1)
Saturation
Drain Current
VDS = 15V
VGS = 0
5
15
mA
VDS = 0
VGS = -20V
-100
pA
IGSS
Gate Reverse Current
TA = 150°C
-100
nA
IG
Gate Operating Current
VDG = 10V
ID = 1.0mA
-20
ID(off)
Drain Cut-off Current
VDS = 10V
VGS = -10V
2
pA
VGS(F)
Gate – Source
Forward Voltage
VDS = 0
IG = 1.0mA
1.0
V
RDS(on)
Drain – Source
On Resistance
VGS = 0
ID = 1.0mA
150
DYNAMIC CHARACTERISTICS
gfs
(1)
Common – Source
Forward Transconductance
4.5
7.5
mS
gos
(1)
Common – Source
Output Transconductance
VDS = 15V
f = 1.0KHz
VGS = 0
50
S
Ciss
Common – Source
Input Capacitance
4
Coss
Common – Source
Output Capacitance
2
Crss
Common – Source Reverse
Transfer Capacitance
VDS = 15V
f = 1.0MHz
VGS = 0
1.2
pF
biss
(2)
Common – Source
Input Susceptance
2.5
giss
(2)
Common – Source
Input Conductance
0.3
boss
(2)
Common – Source
Output Susceptance
1.0
mS
goss
(2)
Common – Source
Output Conductance
VDS = 15V
f = 100MHz
VGS = 0
75
S
Gpe
(2)
Common – Source Insertion
Power Gain
18
NF
(2)
Noise Figure
VDS = 15V
f = 100MHz
ID = 5mA
RG = 1.0K
2
dB
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
(2)
By design only, not a production test.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4416ACSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel |
| 2N4416A-E3 | 功能描述:JFET 35V 5mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4416A-E3 | 制造商:Vishay Siliconix 功能描述:; LEADED PROCESS COMPATIBLE:YES |
| 2N4416CSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel |
| 2N4416CSMA | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SMALL SIGNAL N-CHANNEL J-FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
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