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    參數資料
    型號: 2N4416AC1AESALVT3
    廠商: SEMELAB LTD
    元件分類: 小信號晶體管
    英文描述: 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
    封裝: HERMETIC SEALED PACKAGE-3
    文件頁數: 2/4頁
    文件大?。?/td> 579K
    代理商: 2N4416AC1AESALVT3
    SILICON SMALL SIGNAL
    N-CHANNEL JFET
    2N4416AC1
    Semelab Limited
    Coventry Road, Lutterworth, Leicestershire, LE17 4JB
    Telephone +44 (0) 1455 556565
    Fax +44 (0) 1455 552612
    Email: sales@semelab-tt.com
    Website: http://www.semelab-tt.com
    Document Number 8384
    Issue 1
    Page 2 of 4
    ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
    Symbols
    Parameters
    Test Conditions
    Min.
    Typ
    Max.
    Units
    V(BR)GSS
    Gate – Source
    Breakdown Voltage
    VDS = 0
    IG = -1.0A
    -35
    VGS(off)
    Gate – Source
    Cut-off Voltage
    VDS = 15V
    ID = 1.0nA
    -2.5
    -6
    VGS
    Gate – Source Voltage
    VDS = 15V
    ID = 0.5mA
    -1.0
    -5.5
    V
    IDSS
    (1)
    Saturation
    Drain Current
    VDS = 15V
    VGS = 0
    5
    15
    mA
    VDS = 0
    VGS = -20V
    -100
    pA
    IGSS
    Gate Reverse Current
    TA = 150°C
    -100
    nA
    IG
    Gate Operating Current
    VDG = 10V
    ID = 1.0mA
    -20
    ID(off)
    Drain Cut-off Current
    VDS = 10V
    VGS = -10V
    2
    pA
    VGS(F)
    Gate – Source
    Forward Voltage
    VDS = 0
    IG = 1.0mA
    1.0
    V
    RDS(on)
    Drain – Source
    On Resistance
    VGS = 0
    ID = 1.0mA
    150
    DYNAMIC CHARACTERISTICS
    gfs
    (1)
    Common – Source
    Forward Transconductance
    4.5
    7.5
    mS
    gos
    (1)
    Common – Source
    Output Transconductance
    VDS = 15V
    f = 1.0KHz
    VGS = 0
    50
    S
    Ciss
    Common – Source
    Input Capacitance
    4
    Coss
    Common – Source
    Output Capacitance
    2
    Crss
    Common – Source Reverse
    Transfer Capacitance
    VDS = 15V
    f = 1.0MHz
    VGS = 0
    1.2
    pF
    biss
    (2)
    Common – Source
    Input Susceptance
    2.5
    giss
    (2)
    Common – Source
    Input Conductance
    0.3
    boss
    (2)
    Common – Source
    Output Susceptance
    1.0
    mS
    goss
    (2)
    Common – Source
    Output Conductance
    VDS = 15V
    f = 100MHz
    VGS = 0
    75
    S
    Gpe
    (2)
    Common – Source Insertion
    Power Gain
    18
    NF
    (2)
    Noise Figure
    VDS = 15V
    f = 100MHz
    ID = 5mA
    RG = 1.0K
    2
    dB
    Notes
    (1)
    Pulse Width ≤ 300us, δ ≤ 2%
    (2)
    By design only, not a production test.
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