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參數(shù)資料
| 型號(hào)： | 2N4410D27Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 294K |
| 代理商： | 2N4410D27Z |
2N4410
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
80
V
V(BR)CEX
Collector-Emitter Breakdown Voltage
IC = 500
A, V
BB = 5.0 V
RBE = 8.2 k
120
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
120
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, IC = 0
5.0
V
ICBO
Collector Cutoff Current
VCB = 100 V, IE = 0
VCB = 100 V, IE = 0, TA = 100
°C
10
1.0
nA
A
IEBO
Emitter Cutoff Current
VEB = 4.0 V, IC = 0
100
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
60
400
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
0.2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
0.8
V
VBE(on)
Base-Emitter On Voltage
VCE = 5.0 V, IC = 1.0 mA
0.8
V
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 10 V, f = 100 kHz
12
pF
Cib
Input Capacitance
VEB = 0.5 V, f = 100 kHz
50
pF
hfe
Small-Signal Current Gain
IC = 10 mA, VCE = 10 V,
f = 30 MHz
2.0
10
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
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