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參數(shù)資料
| 型號： | 2N4402J05Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大小： | 361K |
| 代理商： | 2N4402J05Z |
2N4402
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100
A, I
C = 0
5.0
V
ICEX
Collector Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
A
IBL
Base Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
A
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
VCE = 2.0 V, IC = 150 mA
VCE = 2.0 V, IC = 500 mA
30
50
20
150
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.40
0.75
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.75
0.95
1.30
V
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 10 V, f = 140 kHz
8.5
pF
Cib
Input Capacitance
VEB = 0.5 V, f = 140 kHz
30
pF
hfe
Small-Signal Current Gain
IC = 20 mA, VCE = 10 V,
f = 100 MHz
1.5
hfe
Small-Signal Current Gain
IC = 1.0 mA, VCE = 10 V,
30
250
hie
Input Impedance
f = 1.0 kHz
0.75
7.5
k
hre
Voltage Feedback Ratio
0.10
8.0
x10
-4
hoe
Output Admittance
1.0
100
mhos
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
td
Delay Time
VCC = 30 V, IC =150 mA,
15
tr
Rise Time
IB1 = 15 mA, VBE ( off ) = 2.0 V
20
ns
ts
Storage Time
VCC = 30 V, IC =150 mA,
225
ns
tf
Fall Time
IB1 = IB2 = 15 mA
30
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4402RLRA | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N4402TA | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4402TA_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4402TAR | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4402TF | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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