參數(shù)資料
型號： 2N4402-BP
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 小信號晶體管
英文描述： 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁數(shù)： 1/5頁
文件大?。?/td> 232K
代理商： 2N4402-BP
2N4402
PNP General
Purpose Amplifier
Features
This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 500mA
Maximum Ratings*
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current, Continuous
600
mA
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
PD
Total Device Dissipation
Derate above 25
OC
625
5.0
mW
mW/
OC
RJC
Thermal Resistance, Junction to Case
83.3
OC/W
RJA
Thermal Resistance, Junction to Ambient
200
OC/W
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symb ol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0)
40
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100ì Adc, IE=0)
40
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100ì Adc, IC=0)
5.0
---
Vdc
ICEX
Collector Cutoff Current
(VCE=35Vdc, VEB=0.4Vdc)
---
0.1
uAdc
IBL
Base Cutoff Current
(VCE=35Vdc, VEB=0.4Vdc)
---
0.1
uAdc
* These ratings are limiting values above which the serviceability of any
semiconductor device may be impaired.
Notes: 1. These ratings are based on a maximum junction temperature of 150
degrees C.
2. These are steady state limits. The factory should be consulted on
applications involving pulsed or low duty cycle operations.
TO-92
AE
B
C
D
G
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision:
A
201
1/01/01
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G.096
.104
2.44
2.64
TM
Micro Commercial Components
www.mccsemi.com
1 of 5
Lead Free Finish/Rohs Compliant ("P" Suffix designates
Compliant. See ordering information)
Marking:Type number
Moisure Sensitivity Level 1
Epoxy meets UL 94 V-0 flammability rating
E
B
C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N4402BU 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4402RLRA 制造商:Rochester Electronics LLC 功能描述:- Bulk
2N4402TA 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4402TA_Q 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4402TAR 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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