- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33252 > 2N4401/E6 (VISHAY SEMICONDUCTORS) 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N4401/E6 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 封裝： | PLASTIC, TO-92, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 25K |
| 代理商： | 2N4401/E6 |
2N4401
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88117
2
08-May-02
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 0.1 mA, IE = 0
60
——
V
Collector-Emitter Breakdown Voltage(1)
V(BR)CEO
IC = 1 mA, IB = 0
40
——
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 0.1 mA, IC = 0
6.0
——
V
Collector-Emitter Saturation Voltage
VCEsat
IC = 150 mA, IB = 15 mA
——
0.40
V
IC = 500 mA, IB = 50 mA
——
0.75
Base-Emitter Saturation Voltage
VBEsat
IC = 150 mA, IB = 15 mA
0.75
—
0.95
V
IC = 500 mA, IB = 50 mA
——
1.20
Collector Cutoff Current
ICEV
VEB = 0.4 V, VCE = 35 V
——
100
nA
Base Cutoff Current
IBEV
VEB = 0.4 V, VCE = 35 V
——
100
nA
VCE = 1 V, IC = 0.1 mA
20
——
VCE = 1 V, IC = 1 mA
40
——
DC Current Gain
hFE
VCE = 1 V, IC = 10 mA
80
———
VCE = 1 V, IC = 150 mA
100
—
300
VCE = 2 V, IC = 500 mA
40
——
Input Impedance
hie
VCE = 10 V, IC = 1 mA
1.0
—
15
k
f = 1 kHz
Voltage Feedback Ratio
hre
VCE = 10 V, IC = 1 mA
0.1 10-4
—
8 10-4
—
f = 1 kHz
Current Gain-Bandwidth Product
fT
VCE = 5 V, IC = 20 mA
250
——
MHz
f = 100 MHz
Collector-Base Capacitance
CCBO
VCB = 5 V, IE = 0,
——
6.5
pF
f = 1.0 MHz
Emitter-Base Capacitance
CEBO
VCB = 0.5 V, IC = 0,
——
30
pF
f = 1.0 MHz
Small Signal Current Gain
hfe
VCE = 10 V, IC = 1 mA,
40
—
500
—
f = 1 kHz
Output Admittance
hoe
VCE = 10 V, IC = 1 mA,
1.0
—
30
S
f = 1 kHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N4402-18 | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N4403-5 | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N4402D27Z | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N4402J05Z | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N4402D26Z | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4401G | 功能描述:兩極晶體管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4401G-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| 2N4401G-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| 2N4401-J61Z | 制造商:Texas Instruments 功能描述:1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2N4401L-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。