參數(shù)資料
型號(hào)： 2N4401-BULK
廠商： VISHAY SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 2/6頁
文件大?。?/td> 101K
代理商： 2N4401-BULK
www.vishay.com
2
Document Number 85111
Rev. 1.2, 27-Oct-04
2N4401
Vishay Semiconductors
Electrical DC Characteristics
1) Pulse test: Pulse width = 300
s - Duty cycle = 2 %.
Electrical AC Characteristics
Switching Characteristics
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
Collector - base breakdown
voltage
IC = 0.1 mA, IE = 0
V(BR)CBO
60
V
Collector - emitter breakdown
voltage
IC = 1 mA, IB = 0
V(BR)CEO
40
V
Emitter - base breakdown
voltage
IE = 0.1 mA, IC = 0
V(BR)EBO
6.0
V
Collector - emitter saturation
voltage1)
IC = 150 mA, IB = 15 mA
VCEsat
0.40
V
IC = 500 mA, IB = 50 mA
VCEsat
0.75
V
Base - emitter saturation
voltage1)
IC = 150 mA, IB = 15 mA
VBEsat
0.75
0.95
V
IC = 500 mA, IB = 50 mA
VBEsat
1.20
V
Collector-emitter cut-off current
VEB = 0.4 V, VCE = 35 V
ICEV
100
nA
Base cut - off current
VEB = 0.4 V, VCE = 35 V
IBEV
100
nA
DC current gain
VCE = 1 V, IC = 0.1 mA
hFE
20
VCE = 1 V, IC = 1 mA
hFE
40
VCE = 1 V, IC = 10 mA
hFE
80
VCE = 1 V, IC = 150 mA
hFE
100
300
VCE = 2 V, IC = 500 mA
hFE
40
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
Input impedance
VCE = 10 V, IC = 1 mA, f = 1 kHz
hie
1.0
15
k
Voltage feedback ratio
VCE = 10 V, IC = 1 mA, f = 1 kHz
hre
0.1 x 10-4
8 x 10-4
Current gain - bandwidth
product
VCE = 5 V, IC = 20 mA,
f = 100 MHz
fT
250
MHz
Collector - base capacitance
VCB = 5 V, f = 1.0 MHz, IE = 0
CCBO
6.5
pF
Emitter - base capacitance
VCB = 0.5 V, f = 1.0 MHz, IC = 0
CEBO
30
pF
Small signal current gain
VCE = 10 V, IC = 1 mA, f = 1 kHz
hfe
40
500
Output admittance
VCE = 10 V, IC = 1 mA, f = 1 kHz
hoe
1.0
30
S
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
Delay time (see fig. 1)
IC = 150 mA, IB1 = 15 mA,
VCC = 30 V, VBE = 2.0 mA
td
15
ns
Rise time (see fig. 1)
IC = 150 mA, IB1 = 15 mA,
VCC = 30 V, VBE = 2.0 mA
tr
20
ns
Storage time (see fig. 2)
IB1 = IB2 = 15 mA,
VCC = 30 V, IC = 150 mA
ts
225
ns
Fall time (see fig. 2)
IB1 = IB2 = 15 mA,
VCC = 30 V, IC = 150 mA
tf
30
ns
相關(guān)PDF資料
PDF描述
2N4401 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N4401-BULKS 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4401G 功能描述:兩極晶體管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4401G-T92-B 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER
2N4401G-T92-K 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER
2N4401-J61Z 制造商:Texas Instruments 功能描述:1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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