參數(shù)資料
型號: 2N4401,116
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43A, 3 PIN
文件頁數(shù): 3/7頁
文件大?。?/td> 57K
代理商: 2N4401,116
2004 Oct 28
3
Philips Semiconductors
Product specication
NPN switching transistor
2N4401
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
note 1
200
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB =60V; IE =0 A
50
nA
IEBO
emitter-base cut-off current
VEB =6V; IC =0 A
50
nA
hFE
DC current gain
VCE = 1 V; see Fig.2
IC = 0.1 mA
20
IC = 1 mA
40
IC =10mA
80
IC = 150 mA; note 1
100
300
VCE =2V; IC = 500 mA; note 1
40
VCEsat
collector-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
400
mV
IC = 500 mA; IB = 50 mA; note 1
750
mV
VBEsat
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
950
mV
IC = 500 mA; IB = 50 mA; note 1
1.2
V
Cc
collector capacitance
VCB =5V; IE =ie = 0 A; f = 1 MHz
6.5
pF
Ce
emitter capacitance
VEB = 500 mV; IC =ic = 0 A;
f = 1 MHz
30
pF
fT
transition frequency
VCE =10V; IC = 20 mA; f = 100 MHz 250
MHz
Switching times (between 10 % and 90 % levels); see Fig.3
ton
turn-on time
ICon = 150 mA; IBon = 15 mA;
IBoff = 15 mA
35
ns
td
delay time
15
ns
tr
rise time
20
ns
toff
turn-off time
250
ns
ts
storage time
200
ns
tf
fall time
60
ns
相關(guān)PDF資料
PDF描述
2N4401-T/R 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4401G-T92-B 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4401RL 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4401RLRE 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4401RL1 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N4401-A 功能描述:兩極晶體管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4401A3 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:General Purpose NPN Epitaxial Planar Transistor
2N4401AMO 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 600MA I(C) | TO-92
2N4401-AP 功能描述:兩極晶體管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4401-BP 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN General Purpose Amplifier