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參數(shù)資料
| 型號： | 2N4400RLRA |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 20/25頁 |
| 文件大小： | 432K |
| 代理商： | 2N4400RLRA |
2N4400 2N4401
2–30
Motorola Small–Signal Transistors, FETs and Diodes Device Data
6.0
8.0
10
0
4.0
2.0
0.1
2.0 5.0
10
20
50
1.0
0.5
0.2
0.01 0.02 0.05
100
Figure 9. Frequency Effects
f, FREQUENCY (kHz)
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
N
F,
NOISE
F
IGU
RE
(
dB)
IC = 1.0 mA, RS = 150
IC = 500 A, RS = 200
IC = 100 A, RS = 2.0 k
IC = 50 A, RS = 4.0 k
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
100 k
50
100 200
500
1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
6.0
8.0
10
0
4.0
2.0
NF
,NOISE
FIGURE
(dB)
Figure 10. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
f = 1.0 kHz
IC = 50 A
IC = 100 A
IC = 500 A
IC = 1.0 mA
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high–gain and a low–gain unit were
selected from both the 2N4400 and 2N4401 lines, and the
same units were used to develop the correspondingly num-
bered curves on each graph.
Figure 11. Current Gain
IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.5 0.7 1.0
2.0
3.0
10
0.3
100
200
20
70
50
300
h
fe
,C
U
RRENT
G
AIN
h ie
,INPUT
IMPEDANCE
(OHMS)
Figure 12. Input Impedance
IC, COLLECTOR CURRENT (mA)
50k
500
30
5.0 7.0
20 k
10 k
5.0 k
2.0 k
1.0 k
0.1
0.2
0.5 0.7
1.0
2.0
3.0
10
0.3
5.0 7.0
Figure 13. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.5 0.7
1.0
2.0
3.0
10
0.3
0.2
10
Figure 14. Output Admittance
IC, COLLECTOR CURRENT (mA)
100
1.0
5.0 7.0
50
20
10
5.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
h
,OUTPUT
ADMITT
ANCE
(
mhos)
oe
h
,V
OL
TA
G
E
F
EE
D
BAC
K
RA
TIO
(X
10
)
re
m
–4
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
5.0 7.0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4400RLRB | 制造商:ON Semiconductor 功能描述: |
| 2N4400TA | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4400TA_Q | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4400TAR | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4400TF | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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