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參數(shù)資料
| 型號(hào)： | 2N4400J18Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 9/16頁 |
| 文件大小： | 519K |
| 代理商： | 2N4400J18Z |
2N4400
/
MMBT4400
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100
A, I
C = 0
6.0
V
ICEX
Collector Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
A
IBL
Emitter Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
A
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
VCE = 1.0 V, IC = 150 mA
VCE = 2.0 V, IC = 500 mA
20
40
50
20
150
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 150 mA, IB =15 mA
IC = 500 mA, IB = 50 mA
0.40
0.75
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150 mA, IB =15 mA
IC = 500 mA, IB = 50 mA
0.75
0.95
1.2
V
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 5.0 V, f = 140 kHz
6.5
pF
Cib
Input Capacitance
VEB = 0.5 V, f = 140 kHz
30
pF
hfe
Small-Signal Current Gain
IC = 20 mA, VCE = 10 V,
f = 100 MHz
2.0
hfe
Small-Signal Current Gain
VCE = 10 V, IC = 1.0 mA,
20
250
hie
Input Impedance
f = 1.0 kHz
0.5
7.5
K
hre
Voltage Feedback Ratio
0.1
8.0
x 10
-4
hoe
Output Admittance
1.0
30
mhos
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
td
Delay Time
VCC = 30 V, IC = 150 mA,
15
ns
tr
Rise Time
IB1 = 15 mA ,VEB = 2 V
ts
Storage Time
VCC = 30 V, IC = 150 mA
225
ns
tf
Fall Time
IB1 = IB2 = 15 mA
30
ns
20
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| 2N4400RA | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4400RLRB | 制造商:ON Semiconductor 功能描述: |
| 2N4400TA | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4400TA_Q | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4400TAR | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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