參數(shù)資料
型號(hào): 2N4399
元件分類: 功率晶體管
英文描述: 30 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
文件頁數(shù): 1/2頁
文件大?。?/td> 29K
代理商: 2N4399
6 Lake Street, Lawrence, MA 01841
3/98 REV: D
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N4399
2N5745
Units
Collector-Emitter Voltage
VCEO
60
80
Vdc
Collector-Base Voltage
VCBO
60
80
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Base Current
IB
7.5
Adc
Collector Current
IC
30
20
Adc
Total Power Dissipation
@ TA = 25
0C (1)
@ TC = 100
0C (2)
PT
5.0
115
W
Operating & Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
RθJC
RθJA
0.875
35
0C/W
1)
Derate linearly 28.57 mW/
0C for TA > 250C
2)
Derate linearly 1.15 W/
0C for TC > 1000C
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N4399
2N5745
V(BR)CEO
60
80
Vdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
2N4399
VCE = 80 Vdc
2N5745
ICEO
100
Adc
Collector-Emitter Cutoff Current
VCE = 60 Vdc, VBE = 1.5 Vdc
2N4399
VCE = 80 Vdc, VBE = 1.5 Vdc
2N5745
ICEX
5.0
Adc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
5.0
Adc
TECHNICAL DATA
2N4399 JANTX, JTXV
2N5745 JANTX, JTXV
Processed per MIL-PRF-19500/433
PNP HIGH-POWER SILICON TRANSISTOR
TO-3 (TO-204AA)
MIL-PRF
QPL
DEVICES
相關(guān)PDF資料
PDF描述
2N4399 30 A, PNP, Si, POWER TRANSISTOR, TO-3
2N43A 300 mA, 30 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-5
2N43A 300 mA, 45 V, PNP, Ge, SMALL SIGNAL TRANSISTOR
2N45 10 mA, 45 V, PNP, Ge, SMALL SIGNAL TRANSISTOR
2N43 300 mA, 30 V, PNP, Ge, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N439A 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN HIGH FREQUENCY COMPUTER TRANSISTORS
2N43A 制造商:General Electric Company 功能描述:
2N440 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | TO-5
2N4400 功能描述:兩極晶體管 - BJT TO-92 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4400/D 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors NPN