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參數(shù)資料
| 型號(hào)： | 2N4392G4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18 |
| 封裝： | METAL PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 17K |
| 代理商： | 2N4392G4 |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IG = 1.0AVDS = 0
VGS = 20V
VDS = 0
VGS = 20V
VDS = 0
TA = 150°C
VDS = 20V
ID = 1.0nA
IG = 1.0mA
VDS = 0
VGS = 7V
VDS = 20V
VGS = 7V
VDS = 20V
TA = 150°C
VGS = 0V
VDS = 20V
ID = 6mA
VGS = 0
ID = 1.0mA
VGS = 0
VGS = 0V
VDS = 20V
f = 1.0MHz
VGS = 7V
VDS = 0V
f = 1.0MHz
VGS = 0V
ID = 0
f = 1.0kHz
ID(on) = 6mA
VGS(on) = 7V
ID(on) = 6mA
VGS(off) = 7V
40
0.1
0.2
-0.2
-5
1.0
0.1
0.2
25
75
0.4
60
14
3.5
60
15
35
5.0
20
OFF CHARACTERISTICS
2N4392
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 100
s ,Duty Cycle < 2%
2) ft is defined as the frequency at which |hfe| extrapolates to untity.
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
nA
A
V
nA
A
mA
V
pF
ns
V(BR)GSS
Gate Source Breakdown Voltage1
IGSS
Gate Reverse Current
VGS
Gate Source Voltage
VGS(f)
Gate Source Forward Voltage
ID(off)
Drain
Cut-off Current
IDSS
Zero Gate voltage Drain Current1
VDS(on)
Drain Source On–Voltage
rDS(on)
Static Drain Source On Resistance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
rds(on)
Drain–Source “ON” Resistance
ton
Turn–On Time
toff
Turn–Off Time
tr
RiseTime
tf
FallTime
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 3846
Issue 2
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|---|---|
| 2N4393C1C-JQRS.GRPB | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2N4393C1B-JQRS.GCDE | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2N4393C1B-JQRS.GRPB | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4392UB | 功能描述:N CHANNEL JFET 制造商:microsemi ire division 系列:* 零件狀態(tài):在售 標(biāo)準(zhǔn)包裝:1 |
| 2N4393 | 功能描述:JFET N-Chan JFET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4393_TO-18 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Single N-Channel JFET switch |
| 2N4393-2 | 制造商:Vishay Angstrohm 功能描述:Trans JFET N-CH 3-Pin TO-206AA T/R 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-18 - Bulk 制造商:Vishay Intertechnologies 功能描述:FIELD EFFECT TRANSISTOR |
| 2N4393C1 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON SMALL SIGNAL N-CHANNEL JFET |
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