參數(shù)資料
型號(hào)： 2N4391
廠商： VISHAY SILICONIX
元件分類： 小信號(hào)晶體管
英文描述： N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA
封裝： HERMETIC SEALED, TO-18, 3 PIN
文件頁數(shù)： 2/7頁
文件大小： 59K
代理商： 2N4391
2N/PN/SST4391 Series
Vishay Siliconix
www.vishay.com
7-2
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage:
(2N/PN Prefixes)
–40 V
. . . . . . . . . . . . . . . . . . .
(SST Prefix)
–35 V
. . . . . . . . . . . . . . . . . . . . . . .
Gate Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature
300
_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature :
(2N Prefix)
–65 to 200
_C
. . . . . . . . . . . . . . . . . .
(PN/SST Prefixes)
–55 to 150
_C
. . . . . . . . . . .
Operating Junction Temperature :
(2N Prefix)
–55 to 200
_C
. . . . . . . . . . . . . . . . . .
(PN/SST Prefixes)
–55 to 150
_C
. . . . . . . . . . .
Power Dissipation :
(2N Prefix)a
(TC = 25_C) 1800 mW
. . . . . . . . . .
(PN/SST Prefixes)b
350 mW
. . . . . . . . . . . . . . .
Notes
a.
Derate 10 mW/
_C above 25_C
b.
Derate 2.8 mW/
_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
4391
4392
4393
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V(BR)GSS
IG = –1 mA, VDS = 0 V
–55
–40
Gate-Source
VDS = 20 V
2N/PN: ID = 1 nA
V
Gate-Source
Cutoff Voltage
VGS(off)
VDS = 15 V
SST: ID = 10 nA
–4
–10
–2
–5
–0.5
–3
2N
50
150
25
75
5
30
Saturation Drain
Currentb
IDSS
VDS = 20 V, VGS = 0 V
PN
50
150
25
100
5
60
mA
Currentb
DSS
DS
GS
SST
50
25
5
VGS = –20 V
2N/SST
–5
–100
VGS = –20 V
VDS = 0 V
PN
–5
–1000
pA
Gate Reverse Current
IGSS
2N: TA = 150_C
–13
–200
GSS
PN: TA = 100_C
–1
–200
nA
SST: TA = 125_C
–3
Gate Operating Current
IG
VDG = 15 V, ID = 10 mA
–5
2N: VGS = –5 V
5
100
2N: VGS = –7 V
5
100
pA
2N: VGS = –12 V
5
100
VDS = 20 V
PN: VGS = –5 V
0.005
1
PN: VGS = –7 V
0.005
1
nA
PN: VGS = –12 V
0.005
1
SST VDS = 10 V, VGS = –10 V
5
100
pA
Drain Cutoff Current
ID(off)
2N: VGS = –5 V
13
200
VDS = 20 V
T = 150
_C
2N: VGS = –7 V
13
200
TA = 150_C
2N: VGS = –12 V
13
200
PN: VGS = –5 V
1
200
nA
VDS = 20 V
T = 100
_C
PN: VGS = –7 V
1
200
nA
TA = 100_C
PN: VGS = –12 V
1
200
VDS = 10 V
TA = 125_C
SST: VGS = –10 V
3
ID = 3 mA
0.25
0.4
Drain-Source
On-Voltage
VDS(on)
VGS = 0 V
ID = 6 mA
0.3
0.4
V
On-Voltage
DS(on)
GS
ID = 12 mA
0.35
0.4
Drain-Source
On-Resistance
rDS(on)
VGS = 0 V, ID = 1 mA
30
60
100
W
Gate-Source
IG = 1 mA
2N
0.7
1
Gate-Source
Forward Voltage
VGS(F)
IG = 1 mA
VDS = 0 V
PN/SST
0.7
V
相關(guān)PDF資料
PDF描述
2N4391 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
2N4391 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
2N4392 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
2N4392 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18
2N4393-E3 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AA
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