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參數(shù)資料
| 型號： | 2N4355 |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-222AB |
| 中文描述： | 晶體管|晶體管|進步黨| 60V的五（巴西）總裁| 500mA的一（c）|至222AB |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 15K |
| 代理商： | 2N4355 |
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 2/00
2N3637CSM
PNP SILICON TRANSISTOR IN A
HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
FEATURES
High Voltage Switching
Low Power Amplifier Applications
Hermetic Ceramic Surface Mount
Package
APPLICATIONS:
CECC Screening Options
Space Quality Levels Options.
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
, T
STG
Collector – Emitter Voltage
Collector – Base Voltage
Emmiter – Base Voltage
Collector Current
Total Device Dissipation @ T
A
= 25°C
Operating and Storage Junction Temperature Range
175V
175V
5V
1A
500mW
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
LCC1
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter
PAD 3 – Collector
2
1
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2
(
0
(
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
(0.31
rad.
A =
3
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