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參數(shù)資料
| 型號： | 2N4264RLRA |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 12/25頁 |
| 文件大?。?/td> | 388K |
| 代理商： | 2N4264RLRA |
2N4264
2–23
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc, TA = – 55°C)
(IC = 30 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)(1)
(IC = 200 mAdc, VCE = 1.0 Vdc)(1)
hFE
25
40
20
40
30
20
—
160
—
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)(1)
VCE(sat)
—
0.22
0.35
Vdc
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)(1)
VBE(sat)
0.65
0.75
0.8
0.95
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
300
—
MHz
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
8.0
pF
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz, IE = 0)
Cobo
—
4.0
pF
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 10 Vdc, VEB(off) = 2.0 Vdc,
td
—
8.0
ns
Rise Time
( CC
EB(off)
IC = 100 mAdc, IB1 = 10 mAdc) (Fig. 1, Test Condition C)
tr
—
15
ns
Storage Time
VCC = 10 Vdc, (IC = 10 mAdc, for ts)
(IC = 100 mA for tf)
ts
—
20
ns
Fall Time
(IC = 100 mA for tf)
(IB1 = –10 mA) (IB2 = 10 mA) (Fig. 1, Test Condition C)
tf
—
15
ns
Turn–On Time
(VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc,
IC = 10 mAdc, IB1 = 3.0 mAdc) (Fig. 1, Test Condition A)
ton
—
25
ns
Turn–Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Fig. 1, Test Condition A)
toff
—
35
ns
Storage Time
(VCC = 10 Vdc, IC = 10 mA,
IB1 = IB2 = 10 mAdc) (Fig. 1, Test Condition B)
ts
—
20
ns
Total Control Charge
(VCC = 3.0 Vdc, IC = 10 mAdc, IB = mAdc)
(Fig. 3, Test Condition A)
QT
—
80
pC
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.
Test
Condition
IC VCC
A
B
C
mA
10
100
V
3
10
RS
3300
560
RC
270
960
96
CS(max)
pF
4
12
VBE(off)
V
–1.5
—
–2.0
V1
V
10.55
—
6.35
V2
V
–4.15
–4.65
V3
V
10.70
6.55
Figure 1. Switching Time Equivalent Test Circuit
VCC
RB
RC
CS
V1
V3
00
V2
VEB(off)
<2 ns
ton
t1
toff
t1
PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%
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