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參數(shù)資料
| 型號： | 2N4264 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-226AA, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 169K |
| 代理商： | 2N4264 |
2N4264
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
CURRENT GAIN CHARACTERISTICS
Figure 2. Minimum Current Gain
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
h
,DC
CURRENT
GAIN
2.0
3.0
10
50
70
10
100
1.0
200
30
20
5.0
7.0
FE
2N4264
VCE = 1 V
TJ = 125°C
25
°C
–15
°C
–55
°C
When a transistor is held in a conductive state by a base current, IB,
a charge, QS, is developed or “stored” in the transistor. QS may be
written: QS = Q1 + QV + QX.
Q1 is the charge required to develop the required collector current.
This charge is primarily a function of alpha cutoff frequency. QV is the
charge required to charge the collector–base feedback capacity. QX is
excess charge resulting from overdrive, i.e., operation in saturation.
The charge required to turn a transistor “on” to the edge of saturation
is the sum of Q1 and QV which is defined as the active region charge,
QA. QA = IB1tr when the transistor is driven by a constant current step
(IB1) and IB1 < <
IC
hFE
.
If IB were suddenly removed, the transistor would continue to
conduct until QS is removed from the active regions through an
external path or through internal recombination. Since the internal
recombination time is long compared to the ultimate capability of a
transistor, a charge, QT, of opposite polarity, equal in magnitude, can
be stored on an external capacitor, C, to neutralize the internal charge
and considerably reduce the turn–off time of the transistor. Figure 3
shows the test circuit and Figure 4 the turn–off waveform. Given QT
from Figure 13, the external C for worst–case turn–off in any circuit is:
C = QT/V, where V is defined in Figure 3.
NOTE 1
Figure 3. QT Test Circuit
Figure 4. Turn–Off Waveform
+10 V
t1
V
<1 ns
3 V
270
8 pF
9.2 k
CS < 4 pF
C
COPT
TIME
C < COPT
C = 0
PULSE WIDTH (t1) = 5 s DUTY CYCLE = 2%
0
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2N4264/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor |
| 2N4265 | 制造商:Motorola Inc 功能描述: |
| 2N4269 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| 2N4269S | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:BIPOLAR NPN SILICON TRANSISTOR |
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