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參數(shù)資料
| 型號： | 2N4261UB |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, CERSOT-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 2N4261UB |
2N4261UB
Silicon PNP Transistor
Dat a Sheet
Copyright
2005
SEMICOA
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA
15
Volts
Collector-Base Cutoff Current
ICBO
VCB = 15 Volts
10
A
Collector-Emitter Cutoff Current
ICEX1
I
ICEX3
VCE = 10Volts, VBE = 0.4Volts
VCE = 10 Volts, VBE = 2 Volts
VCE = 10 Volts, VBE = 2 Volts,
TA = 150°C
50
5
nA
A
Emitter-Base Cutoff Current
IEBX
VBE = 2 Volts, VCE = 10 Volts
5
nA
Emitter-Base Cutoff Current
IEBO
VEB = 4.5 Volts
10
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 1 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
IC = 30 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
TA = -55°C
25
30
20
15
150
Base-Emitter Voltage
VBE1
VBE2
VCE = 1 Volts, IC = 1 mA
VCE = 1 Volts, IC = 10 mA
0.8
1.0
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 1 mA, IB = 0.1 mA
IC = 10 mA, IB = 1 mA
0.15
0.35
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE1|
|hFE2|
f = 100 MHz
VCE = 4 Volts, IC = 5 mA
VCE = 10 Volts, IC = 10 mA
15
20
Open Circuit Output Capacitance
COBO
VCB = 4 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
2.5
pF
Open Circuit Input Capacitance
CIBO
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
2.5
pF
Collector Base time constant
rb’CC1
rb’CC2
VCE = 4 Volts, f = 31.8 MHz
IC = 5 mA
IC = 10 mA
60
50
ps
Switching Characteristics
Saturated Turn-On Time
tON
VCC = 17 Volts, IC = 10 mA
2.5
ns
Saturated Turn-Off Time
tOFF
VCC = 17 Volts, IC = 10 mA
3.5
ns
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| 2N4261UB_05 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
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