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參數(shù)資料
| 型號(hào)： | 2N4126T/R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | 2N4126T/R |
1997 Mar 25
3
Philips Semiconductors
Product specication
PNP general purpose transistor
2N4126
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
25
V
VCEO
collector-emitter voltage
open base
25
V
VEBO
emitter-base voltage
open collector
4V
IC
collector current (DC)
200
mA
ICM
peak collector current
300
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
500
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 20 V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 3V
50
nA
hFE
DC current gain
IC = 2 mA; VCE = 1 V; note 1
120
360
IC = 50 mA; VCE = 1 V; note 1
60
VCEsat
collector-emitter saturation voltage
IC = 50 mA; IB = 5 mA; note 1
400
mV
VBEsat
base-emitter saturation voltage
IC = 50 mA; IB = 5 mA; note 1
950
mV
Cc
collector capacitance
IE =ie = 0; VCB = 5V;f=1MHz
4.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
10
pF
fT
transition frequency
IC = 10 mA; VCE = 20 V; f = 100 MHz 250
MHz
F
noise gure
IC = 100 A; VCE = 5V;RS =1k;
f = 10 Hz to 15.7 kHz
4dB
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|---|---|
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| 2N4130 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 10A I(C) | TO-3 |
| 2N4131 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-3 |
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