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參數(shù)資料
| 型號： | 2N4126 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2N4126 |
D
S21701 Rev. D-3
1 of 1
2N4126
2N4126
PNP SMALL SIGNAL TRANSISTOR
For General Purpose Switching and Amplifier
Applications
Especially Suitable for AF Driver and Low
Power Output Stages
Features
Characteristic
Symbol
Value
Unit
Collector-Emitter Voltage
–VCEO
25
V
Collector-Base Voltage
–VCBO
25
V
Emitter-Base Voltage
–VEBO
4.0
V
Collector Current
–IC
200
mA
Peak Collector Current
–ICM
800
mA
Base Current
–IB
50
mA
Power Dissipation ( Note 1)
Pd
625
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
200
K/W
Operating and Storage Temperature Range
Tj,TSTG
–65 to +150
°C
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
DC Current Gain
hFE
120
—
60
360
—
VCE = –1.0V, IC = –2.0mA
VCE = –1.0V, IC = –50mA
Collector-Base Cutoff Current
–ICBO
—
50
nA
VCB = –20V
Emitter-Base Cutoff Current
–IEBO
—
50
nA
VEB = –3V
Collector-Emitter Saturation Voltage
–VCE(SAT)
—
0.4
V
IC = –50mA, IB = –5.0mA
Base-Emitter Saturation Voltage
–VBE(SAT)
—
0.95
V
IC = –50mA, IB = –5.0mA
Collector-Emitter Breakdown Voltage
–V(BR)CEO
25
—
V
IC = –1.0mA
Collector-Base Breakdown Voltage
–V(BR)CBO
25
—
V
IC = –10A
Emitter-Base Breakdown Voltage
–V(BR)EBO
4.0
—
V
IE = –10A
Gain Bandwidth Product
fT
—
200
—
MHz
VCE = –5.0V, IC = –10mA,
f = 50MHz
Collector-Base Capacitance
CCBO
—12—
pF
VCB = –10V, f = 1.0MHz
Electrical Characteristics @ TA = 25°C unless otherwise specified
Case: TO-92, Plastic
Leads: Solderable per MIL STD 202,
Method 208
Pin Connections: See Diagram
Approx. Weight: 0.18 grams
Mechanical Data
Maximum Ratings @ TA = 25°C unless otherwise specified
D
CB E
H
BOTTOM
VIEW
E
A
B
C
G
TO-92
Dim
Min
Max
A
4.32
4.83
B
4.32
4.78
C
12.50
15.62
D
0.36
0.56
E
3.15
3.94
G
2.29
2.79
H
1.14
1.40
All Dimensions in mm
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4126 TRE | 制造商:CENTRAL SEMICONDUCTOR 功能描述:2N4100 Series TO-92 Silicon Transistor |
| 2N4126 TRE-PB | 制造商:CENTRAL SEMICONDUCTOR 功能描述:2N4100 Series TO-92 Silicon Transistor |
| 2N4126/E6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 200MA I(C) | TO-226AA |
| 2N4126/E7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 200MA I(C) | TO-226AA |
| 2N4126_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier |
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