參數(shù)資料
型號(hào): 2N4125RLRE
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, TO-226AA, 3 PIN
文件頁數(shù): 18/24頁
文件大?。?/td> 349K
代理商: 2N4125RLRE
2N4125
2–20
Motorola Small–Signal Transistors, FETs and Diodes Device Data
f = 1 kHz
IC = 1 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200
W
IC = –1 mA
SOURCE RESISTANCE = 200
W
IC = – 0.5 mA
SOURCE RESISTANCE = 2 k
IC = –100 mA
SOURCE RESISTANCE = 2 k
IC = – 50 mA
Figure 3. Frequency Variations
f, FREQUENCY (kHz)
1.0
2.0
3.0
4.0
5.0
0.1
Figure 4. Source Resistance
RS, SOURCE RESISTANCE (k)
0
NF
,NOISE
FIGURE
(dB)
1.0
2.0
4.0
10
20
40
0.2
0.4
0
100
4.0
6.0
8.0
10
2.0
12
0.1
1.0
2.0
4.0
10
20
40
0.2
0.4
100
NF
,NOISE
FIGURE
(dB)
AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = –5.0 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
h
fe
,C
U
RRENT
G
AIN
Figure 5. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 6. Output Admittance
IC, COLLECTOR CURRENT (mA)
h
,OUTPUT
ADMITT
ANCE
(
mhos)
Figure 7. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 8. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
70
10
30
2.0
3.0
5.0
7.0
10
1.0
0.1
0.2
1.0
2.0
5.0
0.5
10
0.5
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h
,VOL
TAGE
FEEDBACK
RA
TIO
(X
10
)
re
h
,INPUT
IMPEDANCE
(k
ie
0.1
0.2
1.0
2.0
5.0
10
0.5
0.1
0.2
1.0
2.0
5.0
10
0.5
7.0
5.0
0.1
0.2
1.0
2.0
5.0
10
0.5
m
–4
h PARAMETERS
VCE = 10 V, f = 1 kHz, TA = 25°C
50
20
)
相關(guān)PDF資料
PDF描述
2N4125TPER1 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4125TPE1 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4125TPE2 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4125ZL1 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4125RL 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N4125RLRM 制造商:Rochester Electronics LLC 功能描述:- Bulk
2N4125TA 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4125TAR 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4125TAR_Q 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4125TF 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2