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參數(shù)資料
| 型號： | 2N4124RL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 12/24頁 |
| 文件大?。?/td> | 350K |
| 代理商： | 2N4124RL1 |
2N4123 2N4124
2–15
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 2.0 mAdc, VCE = 1.0 Vdc)
2N4123
2N4124
(IC = 50 mAdc, VCE = 1.0 Vdc)
2N4123
2N4124
hFE
50
120
25
60
150
360
—
Collector – Emitter Saturation Voltage(1)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
—
0.3
Vdc
Base – Emitter Saturation Voltage(1)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
—
0.95
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N4123
2N4124
fT
250
300
—
MHz
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
8.0
pF
Collector–Base Capacitance
(IE = 0, VCB = 5.0 V, f = 1.0 MHz)
Ccb
—
4.0
pF
Small–Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k ohm, f = 1.0 kHz)
2N4123
2N4124
hfe
50
120
200
480
—
Current Gain — High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N4123
2N4124
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
2N4123
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
2N4124
|hfe|
2.5
3.0
50
120
—
200
480
—
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k ohm,
2N4123
f = 1.0 kHz)
2N4124
NF
—
6.0
5.0
dB
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.
Figure 1. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 2. Switching Times
IC, COLLECTOR CURRENT (mA)
200
1.0
TIME
(ns)
100
50
30
20
70
10.0
5.0
7.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
CAP
ACIT
ANCE
(pF)
1.0
2.0 3.0
5.0 7.0 10
20 30 40
0.2 0.3
0.5 0.7
Cibo
Cobo
ts
td
tr
tf
VCC = 3 V
IC/IB = 10
VEB(off) = 0.5 V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4124T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-92 |
| 2N4124TA | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4124TAR | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4124TAR_Q | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4124TF | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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