參數(shù)資料
型號(hào)： 2N4124
廠商： DIODES INC
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件頁數(shù)： 1/1頁
文件大?。?/td> 51K
代理商： 2N4124
D
S21601 Rev. D-3
1 of 1
2N4124
2N4124
NPN SMALL SIGNAL TRANSISTOR
Features
Characteristic
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
V
Collector-Base Voltage
VCBO
30
V
Emitter Base-Voltage
VEBO
5V
Collector Current
IC
200
mA
Peak Collector Current
ICM
800
mA
Base Current
IB
50
mA
Power Dissipation (Note 1)
Pd
625
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
200
K/W
Operating and Storage Temperature Range
Tj,TSTG
–65 to +150
°C
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
DC Current Gain
hFE
120
—
60
360
—
VCE = 1.0V, IC = 2.0mA
VCE = 1.0V, IC = 50mA
Collector-Base Cutoff Current
ICBO
—
50
nA
VCB = 20V
Emitter-Base Cutoff Current
IEBO
—
50
nA
VEB = 3.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
—
0.3
V
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
—
0.95
V
IC = 50mA, IB = 5.0mA
Collector-Emitter Breakdown Voltage
V(BR)CEO
25
—
V
IC = 1.0mA
Collector-Base Breakdown Voltage
V(BR)CBO
30
—
V
IC = 10A
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
—
V
IE = 10A
Gain Bandwidth Product
fT
—
200
—
MHz
VCE = 5.0V, IC = 10mA,
f = 50MhZ
Collector-Base Capacitance
CCBO
—
12
pF
VCB = 10V, f = 1.0MHz
Electrical Characteristics @ TA = 25°C unless otherwise specified
For General Purpose Switching and Amplifier
Applications
Especially Suitable for AF Driver and Low
Power Output Stages
Case: TO-92, Plastic
Leads: Solderable per MIL STD 202,
Method 208
Pin Connections: See Diagram
Approx. Weight: 0.18 grams
Mechanical Data
Maximum Ratings @ TA = 25°C unless otherwise specified
D
CB E
H
BOTTOM
VIEW
E
A
B
C
G
TO-92
Dim
Min
Max
A
4.32
4.83
B
4.32
4.78
C
12.50
15.62
D
0.36
0.56
E
3.15
3.94
G
2.29
2.79
H
1.14
1.40
All Dimensions in mm
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2N4124_D26Z 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N4124_D27Z 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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