參數(shù)資料
型號(hào): 2N4123D27Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件頁數(shù): 4/11頁
文件大小: 578K
代理商: 2N4123D27Z
2N4123
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
30
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
5.0
V
ICBO
Collector Cutoff Current
VCB = 20 V, IE = 0
50
nA
IEBO
Emitter Cutoff Current
VEB = 3.0 V, IC = 0
50
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 1.0 V, IC = 2.0 mA
VCE = 1.0 V, IC = 50 mA
50
25
150
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 5.0 mA
0.3
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 50 mA, IB = 5.0 mA
0.95
V
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 5.0 V, f = 100 kHz
4.0
pF
Cib
Input Capacitance
VEB = 0.5 V, f = 0.1 MHz
8.0
pF
hfe
Small-Signal Current Gain
IC = 2.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 10 mA, VCE = 20 V,
f = 100 MHz
50
2.5
200
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V
f = 100 MHz
250
MHz
NF
Noise Figure
VCE = 5.0 V, IC = 100
A,
RS = 1.0 k
,
BW = 10 Hz to 15.7 kHz
6.0
dB
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
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2N4123L34Z 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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