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參數(shù)資料
| 型號(hào)： | 2N4123 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN General Purpose Amplifier(NPN型通用放大器) |
| 中文描述： | 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 32K |
| 代理商： | 2N4123 |
2
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 20 V, I
E
= 0
V
EB
= 3.0 V, I
C
= 0
30
40
5.0
V
V
V
nA
nA
50
50
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 2.0 mA
V
CE
= 1.0 V, I
C
= 50 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
50
25
150
V
CE
(sat)
V
BE
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.3
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
C
ib
Input Capacitance
h
fe
Small-Signal Current Gain
V
CB
= 5.0 V, f = 100 kHz
V
EB
= 0.5 V, f = 0.1 MHz
I
C
= 2.0 mA, V
CE
= 10 V,
f = 1.0 kHz
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
I
= 10 mA, V
CE
= 20 V
f = 100 MHz
V
CE
= 5.0 V, I
C
= 100
μ
A,
R
S
= 1.0 k
,
B
W
= 10 Hz to 15.7 kHz
4.0
8.0
pF
pF
50
2.5
250
200
f
T
Current Gain - Bandwidth Product
MHz
NF
Noise Figure
6.0
dB
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
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