參數(shù)資料
型號: 2N4119A
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel JFETs
中文描述: N溝道JFET的
文件頁數(shù): 3/5頁
文件大小: 61K
代理商: 2N4119A
2N/PN/SST4117A Series
Vishay Siliconix
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Gate Leakage Current
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Output Characteristics
1000
0
5
4
3
2
1
800
0
06
30
gfs
IDSS
TA = 25_C
100 mA
IGSS @ 25_C
100 mA
Output Characteristics
500
400
300
100
0
0.5 V
1.0 V
2.0 V
1.5 V
VGS = 0 V
15
0
3
5
4
2
1
12
9
6
3
0
0.01
0.1
1
200
160
120
40
0
5
4
3
2
1
0
rDS @ ID = 10 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
rDS
gos
TA = 55_C
125_C
VDS = 10 V
f = 1 kHz
100
016
8
420
80
60
20
0
VGS = 0 V
0.5 V
0.4 V
0.3 V
0.2 V
0.1 V
VGS(off) Gate-Source Cutoff Voltage (V)
VDS Drain-Source Voltage (V)
VDG Drain-Gate Voltage (V)
ID Drain Current (mA)
VGS(off) Gate-Source Cutoff Voltage (V)
VDS Drain-Source Voltage (V)
600
400
200
12
18
24
80
25_C
VGS(off) = 0.7 V
VGS(off) = 2.5 V
200
40
12
0
16
8
420
12
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
300
240
180
120
60
0
10 mA
0.1 pA
1 pA
10 pA
100 pA
1 nA
IGSS @ 125_C
VGS(off) = 2.5 V
10 mA
VGS(off) = 2.5 V
I DS
S
Saturation
Drain
Current
(
A)
g
fs
Forward
T
ransconductance
(
S)
g
os
Output
Conductance
(
S)
g fs
Forward
T
ransconductance
(
S)
I G
Gate
Leakage
I D
Drain
Current
(
A)
I D
Drain
Current
(
A)
TA = 125_C
r DS
(on)
Drain-Source
On-Resistance
(k
W
)
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