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參數(shù)資料
| 型號： | 2N4033UA |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 284K |
| 代理商： | 2N4033UA |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0157 Rev. 2 (101305)
Page 2 of 6
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
hFE
IC = 100μAdc, VCE = 5.0Vdc
50
IC = 100mAdc, VCE = 5.0Vdc
100
300
IC = 500mAdc, VCE = 5.0Vdc
70
IC = 1.0Adc, VCE = 5.0Vdc
25
IC = 500mAdc, VCE = 5.0Vdc, TA = -55°C
30
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
IC = 1.0Adc, IB = 100mAdc
0.15
0.50
1.0
Base-Emitter Voltage
VBE(sat)
Vdc
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
0.9
1.2
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small–Signal Short-Circuit Forward
Current Transfer Ratio
|hfe|
IC = 50mAdc, VCE = 10Vdc, f = 100MHz
1.5
6.0
Output Capacitance
Cobo
20
pF
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
Cibo
80
pF
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
On-Time
VCC = 31.9Vdc; IC = 500mAdc; IB1 = 50mAdc
td
15
ηs
Rise Time
VCC = 31.9Vdc; IC = 500mAdc; IB1 = 50mAdc
tr
25
ηs
Storage Time
VCC = 31.9V, IC = 500madc, IB1 = 50mAdc
ts
175
ηs
Fall Time
VCC = 31.9V, IC = 500madc, IB1 = 50mAdc
tf
35
ηs
(4) Pulse Test: Pulse Width = 300
μs, Duty Cycle ≤ 2.0%.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4033UB | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 80V 1A 3-Pin UB 制造商:Microsemi Corporation 功能描述:SMALL SIGNAL TRANSISTOR - Gel-pak, waffle pack, wafer, diced wafer on film |
| 2N4033UBJANTXV | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT PNP 80V 1A 3-Pin CSOT-23 |
| 2N4034 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SI PNP LO-PWR BJT |
| 2N4035 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| 2N4036 | 功能描述:兩極晶體管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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