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參數(shù)資料
| 型號： | 2N4029 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 封裝： | TO-18, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 284K |
| 代理商： | 2N4029 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0157 Rev. 2 (101305)
Page 2 of 6
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
hFE
IC = 100μAdc, VCE = 5.0Vdc
50
IC = 100mAdc, VCE = 5.0Vdc
100
300
IC = 500mAdc, VCE = 5.0Vdc
70
IC = 1.0Adc, VCE = 5.0Vdc
25
IC = 500mAdc, VCE = 5.0Vdc, TA = -55°C
30
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
IC = 1.0Adc, IB = 100mAdc
0.15
0.50
1.0
Base-Emitter Voltage
VBE(sat)
Vdc
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
0.9
1.2
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small–Signal Short-Circuit Forward
Current Transfer Ratio
|hfe|
IC = 50mAdc, VCE = 10Vdc, f = 100MHz
1.5
6.0
Output Capacitance
Cobo
20
pF
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
Cibo
80
pF
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
On-Time
VCC = 31.9Vdc; IC = 500mAdc; IB1 = 50mAdc
td
15
ηs
Rise Time
VCC = 31.9Vdc; IC = 500mAdc; IB1 = 50mAdc
tr
25
ηs
Storage Time
VCC = 31.9V, IC = 500madc, IB1 = 50mAdc
ts
175
ηs
Fall Time
VCC = 31.9V, IC = 500madc, IB1 = 50mAdc
tf
35
ηs
(4) Pulse Test: Pulse Width = 300
μs, Duty Cycle ≤ 2.0%.
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2N4029_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
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| 2N403 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-5 |
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