參數(shù)資料
型號: 2N3961
廠商: AMERICAN MICROSEMICONDUCTOR INC
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-102
封裝: TO-102, 3 PIN
文件頁數(shù): 1/1頁
文件大?。?/td> 238K
代理商: 2N3961
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2N3961 Information
Category Transistors
2N3961 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 40
V(BR)CBO (V) : 65
I(C) Max. (A) : 1.0
Absolute Max. Power Diss. (W) : 10
Minim um Operating Tem p (шC) :
Maxim um Operating Tem p (шC) : 175ю
I(CBO) Max. (A) : 1.0m
@V(CBO) (V) (Test Condition) :
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
f(T) Min. (Hz) Transition Freq : 350M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
Power Gain Min. (dB) :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Noise Figure Min. (dB) :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Sem iconductor Material :
Package Style : TO-102
Mounting Style : T
Description :
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2N3962CSM 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1
2N3963 功能描述:兩極晶體管 - BJT SMALL SIGNAL TRANS PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N3963CSM 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1
2N3964 功能描述:兩極晶體管 - BJT PNP Low Noise RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2