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參數(shù)資料
| 型號(hào)： | 2N3960 |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 420K |
| 代理商： | 2N3960 |
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3960
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 A
12
Volts
Collector-Base Cutoff Current
ICBO
VCB = 20 Volts
10
A
Collector-Emitter Cutoff Current
ICEX1
ICEX2
ICEX3
VCE = 10Volts, VBE = 0.4Volts
VCE = 10Volts, VBE = 2 Volts
VCE = 10Volts, VBE = 2 Volts,
TA = 150°C
1
5
A
nA
A
Emitter-Base Cutoff Current
IEBO
VEB = 4.5 Volts
10
A
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 1 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
IC = 30 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
TA = -55°C
40
60
30
300
Base-Emitter Voltage
VBE1
VBE2
VCE = 1 Volts, IC = 1 mA
VCE = 1 Volts, IC = 30 mA
0.8
1.0
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 1 mA, IB = 0.1 mA
IC = 30 mA, IB = 3 mA
0.2
0.3
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|1
|hFE|2
|hFE|3
f = 100 MHz
VCE = 4 Volts, IC = 5 mA,
VCE = 4 Volts, IC = 10 mA,
VCE = 4 Volts, IC = 30 mA,
13
14
12
Open Circuit Output Capacitance
COBO
VCB = 4 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
2.5
pF
Open Circuit Input Capacitance
CIBO
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
2.5
pF
Semicoa Corporation
Copyright
2010
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