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參數(shù)資料
| 型號： | 2N3906D27Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 879K |
| 代理商： | 2N3906D27Z |
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
5.0
V
IBL
Base Cutoff Current
VCE = 30 V, VBE = 3.0 V
50
nA
ICEX
Collector Cutoff Current
VCE = 30 V, VBE = 3.0 V
50
nA
hFE
DC Current Gain *
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
60
80
100
60
30
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.25
0.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.65
0.85
0.95
V
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
250
MHz
Cobo
Output Capacitance
VCB = 5.0 V, IE = 0,
f = 100 kHz
4.5
pF
Cibo
Input Capacitance
VEB = 0.5 V, IC = 0,
f = 100 kHz
10.0
pF
NF
Noise Figure
IC = 100
A, VCE = 5.0 V,
RS =1.0k
,f=10 Hz to 15.7 kHz
4.0
dB
td
Delay Time
VCC = 3.0 V, VBE = 0.5 V,
35
ns
tr
Rise Time
IC = 10 mA, IB1 = 1.0 mA
35
ns
ts
Storage Time
VCC = 3.0 V, IC = 10mA
225
ns
tf
Fall Time
IB1 = IB2 = 1.0 mA
75
ns
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
2N3906
/
MMBT3906
/
PZT3906
PNP General Purpose Amplifier
(continued)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3906DCSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | PNP | 40V V(BR)CEO | 200MA I(C) | LLCC |
| 2N3906E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
| 2N3906G | 功能描述:兩極晶體管 - BJT 200mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3906-G | 功能描述:二極管 - 通用，功率，開關(guān) -40V -200mA TO-92 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| 2N3906G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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