參數(shù)資料
型號: 2N3906CSM
廠商: SEMELAB LTD
元件分類: 小信號晶體管
英文描述: 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: HERMETIC SEALED, CERAMIC, LCC-3
文件頁數(shù): 2/2頁
文件大?。?/td> 18K
代理商: 2N3906CSM
2N3906CSM
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td
Delay Time
tr
Rise Time
tf
Fall Time
ft
Current Gain Bandwidth Product
Cob
Output Capacitance
hoe
Output Admittance
hfe
Small Signal Current Gain
NF
Noise Figure
250
4.5
100
400
360
4
35
75
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
* Pulse Test: tp ≤ 300s, δ≤ 2%.
-40
-5
-50
-0.25
-0.40
-0.65
-0.85
-0.95
60
80
100
300
60
30
IC = -1mA
IB = 0
IC = -10AIE = 0
IE = -10AIC = 0
VCE = -30V
VBE = 3V
IC = -10mA
IB = -1mA
IC = -50mA
IB = -5mA
IC = -10mA
IB = -1mA
IC = -50mA
IB = -5mA
IC = -0.1mA
IC = -1mA
VCE = -1V
IC = -10mA
IC = -50mA
IC = -100mA
V(BR)CEO* Collector – Emitter Breakdown Voltage
V(BR)CBO
Collector – Base Breakdown Voltage
V(BR)EBO
Emitter – Base Breakdown Voltage
ICEX
Collector – Emitter Cut-off Current
VCE(sat)
Collector – Emitter Saturation Voltage
VBE(sat)
Base – Emitter Saturation Voltage
hFE*
DC Current Gain
V
nA
V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
VCE = -20V
IC = -10mA
f = 100MHz
VCB = -5V
IE = 0
f = 100kHz
VCE = -10V
IC = -10mA
f = 1kHz
VCE = -5V
IC = -100A
f = 1kHz
RS = 1k
VCC = 3V
VBE = 0.5V
IC = 10mA
IB1 = 1mA
VCC = 3V
IC = 10mA
IB1 = IB2 = 1mA
MHz
pF
hmos
dB
ns
SMALL SIGNAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
SWITCHING CHARACTERISTICS (TA = 25°C unless otherwise stated)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number
4283
Issue 1
相關PDF資料
PDF描述
2N3906O-BP 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N3906G 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N3906Y-BP 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N3906G-BP 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N3906 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關代理商/技術參數(shù)
參數(shù)描述
2N3906DCSM 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | PNP | 40V V(BR)CEO | 200MA I(C) | LLCC
2N3906E 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR
2N3906G 功能描述:兩極晶體管 - BJT 200mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N3906-G 功能描述:二極管 - 通用,功率,開關 -40V -200mA TO-92 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
2N3906G 制造商:ON Semiconductor 功能描述:Bipolar Transistor