參數(shù)資料
型號： 2N3904
廠商： Rohm CO.,LTD.
英文描述： NPN General Purpose Transistor(NPN通用晶體管)
中文描述： npn型通用晶體管（npn型通用晶體管）
文件頁數(shù)： 1/4頁
文件大?。?/td> 90K
代理商： 2N3904
UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
NPN General Purpose Transistor
UMT3904 / SST3904 / MMST3904 / 2N3904
!
Features
1) BV
CEO
>
40V (I
C
= 1mA)
2) Complements the UMT3906 / SST3906 / MMST3906
/ 2N3906.
!
Package, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic(pieces)
UMT3904
UMT3
R1A
T106
3000
SST3904
SST3
R1A
T116
3000
MMST3904
SMT3
R1A
T146
3000
TO-92
-
T93
3000
2N3904
!
Absolute maximum ratings
(Ta = 25
°
C)
2N3904
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
*
When mounted on a 7 x 5 x 0.6 mm ceramic board.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
60
40
6
0.2
0.35
0.625
150
55~+150
Unit
V
V
V
A
W
W
W
°
C
°
C
P
C
0.2
*
SST3904, MMST3904
UMT3904,
SST3904,
MMST3904
!
External dimensions
(Units : mm)
UMT3904
SST3904
MMST3904
2N3904
0~0.1
0.2Min.
2
±
0
1
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95 0.95
0
0
0.1
+0.2
+0.1
0.06
+0.1
0.05
(2)
(1)
(3)
0~0.1
2
±
0
1
0
~
0
1.1
0.8±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.950.95
0
0
0.1
+0.2
+0.1
0.06
+0.1
0.05
(2)
(1)
(3)
0~0.1
(2)
(1)
(3)
0
~
0
2
±
0
1
±
0
0.9±0.1
0.2
0.7±0.1
0.15±0.05
0.3
2.0±0.2
1.3±0.1
0.65 0.65
+0.1
0
4
±
0
(
4.8
±
0.2
3.7
±
0.2
5
0.45
±
0.1
2.3
0.5
+
0.15
0.05
2.5
+
0.3
0.1
(1)
(2)
(3)
All terminals have same dimensions
All terminals have same dimensions
All terminals have same dimensions
ROHM : UMT3
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
(1) Emitter
(2) Base
(3) Collector
2
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
EBO
Min.
60
40
6
-
-
-
Typ.
-
-
-
-
-
-
Max.
-
-
-
50
50
0.2
Unit
V
V
V
nA
nA
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
I
C
= 10
μ
A
I
C
= 1mA
I
E
= 10
μ
A
V
CB
= 30V
V
EB
= 3V
I
C
/I
B
= 10mA/1mA
-
-
-
0.95
-
Base-emitter saturation voltage
V
BE(sat)
0.65
-
0.85
V
-
-
0.3
I
C
/I
B
= 50mA/5mA
I
C
/I
B
= 10mA/1mA
Collector-emitter saturation voltage
V
CE(sat)
V
I
C
/I
B
= 50mA/5mA
V
CE
= 1V , I
C
= 0.1mA
V
CE
= 1V , I
C
= 1mA
V
CE
= 1V , I
C
= 10mA
V
CE
= 1V , I
C
= 50mA
V
CE
= 1V , I
C
= 100mA
V
CE
= 20V , I
E
=
10mA, f = 100MHz
V
CB
= 10V , f = 100kHz
V
EB
= 0.5V , f = 100kHz
V
CC
= 3V , V
BE(OFF)
= 0.5V , I
C
= 10mA , I
B1
= 1mA
V
CC
= 3V , V
BE(OFF)
= 0.5V , I
C
= 10mA , I
B1
= 1mA
V
CC
= 3V , I
C
= 10mA , I
B1
=
I
B2
= 1mA
V
CC
= 3V , I
C
= 10mA , I
B1
=
I
B2
= 1mA
30
300
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
8
35
35
200
50
60
-
-
DC current transfer ratio
h
FE
100
-
300
-
70
-
-
40
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
f
T
Cob
Cib
td
tr
tstg
tf
MHz
pF
pF
ns
ns
ns
ns
~
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