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參數(shù)資料
| 型號： | 2N3866AUB |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, CERSOT-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 233K |
| 代理商： | 2N3866AUB |
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3866AUB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 100 A
60
Volts
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 5 mA
30
Volts
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 100 A
3.5
Volts
Collector-Emitter Cutoff Current
ICEO
VCE = 28 Volts
20
A
Collector-Emitter Cutoff Current
ICES1
ICES2
VCE = 55 Volts
VCE = 55 Volts, TA = 150°C
100
2
A
mA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
IC = 50 mA, VCE = 5 Volts
IC = 360 mA, VCE = 5 Volts
IC = 50 mA, VCE = 5 Volts
TA = -55°C
25
8
12
200
Collector-Emitter Saturation Voltage
VCEsat1
IC = 100 mA, IB = 10 mA
1
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 15 Volts, IC = 50 mA,
f = 200 MHz
4
7.5
Open Circuit Output Capacitance
COBO
VCB = 28 Volts, IE = 0 mA,
3.5
pF
Collector Efficiency
η1
η2
VCC = 28 Volts, f = 400 MHz
Pin = 0.15 W
Pin = 0.075 W
45
40
%
Power Output
P1out
VCC = 28 Volts, f = 400 MHz
Pin = 0.15 W
Pin = 0.075 W
1.0
0.5
2
Watts
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