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參數(shù)資料
| 型號(hào)： | 2N3846 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN POWER SILICON TRANSISTOR |
| 中文描述： | 20 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-63 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 67K |
| 代理商： | 2N3846 |
2N3846, 2N3847 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 1 Adc; V
CE
= 3.0 Vdc
I
C
= 5 Adc; V
CE
= 3.0 Vdc
I
C
= 10 Adc; V
CE
= 3.0 Vdc
Base-Emitter Voltage
V
CE
= 3 Vdc; I
C
= 10 Adc
Base-Emitter Saturated Voltage
I
B
= 1.6 Adc; I
C
= 10 Adc
Collector-Emitter Saturated Voltage
I
B
= 1.6 Adc; I
C
= 10 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 10 Vdc, f = 1 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 5 Adc, V
CE
= 10 Vdc, f = 1 kHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
V
BE(off)
~ -
7.5
Vdc; I
C
= 10 Adc;
I
B1
= 2 Adc; I
B2
= -2 Adc; R
L
= 15
Turn-Off Time
V
BE(off)
~ -
7.5
Vdc; I
C
= 10 Adc;
I
B1
= 2 Adc; I
B2
= 2 Adc; R
L
= 15
SAFE OPERATING AREA
DC Tests
T
C
= +100
0
C; V
CE
= 0 Vdc, I
C
= 0 Adc (See Figure 3 on Mil-PRF-19500/412)
Test 1
V
CE
= 7.5 Vdc; I
C
= 20 Adc; t
p
= 1.0 s; 1 cycle
Test 2
V
CE
= 200 Vdc; I
C
= 100 mAdc; t
p
= 1.0 s, 1 cycle
Test 3
V
CE
= 58 Vdc; I
C
= 1.0 Adc; t
p
= 1.0 s, 1 cycle
Burnout by Pulsing (2N3847 only)
T
C
= +100
0
C; V
CE
= 300 Vdc; I
C
= 20 mAdc; t
p
= 1.0 s, 1 cycle
Unclamped Inductive Sweep
T
C
= +100
0
C; I
C
= 20 Adc; I
B
= 2 Adc (See Figure 4 on Mil-PRF-19500/412)
Clamped Inductive Sweep
T
C
= +100
0
C; I
C
= 20 Adc; I
B
= 2 Adc (See Figure 5 on Mil-PRF-19500/412)
3) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
h
FE
70
40
12
240
60
V
BE
1.20
Vdc
V
BE(sat)
1.30
Vdc
V
CE(sat)
0.75
Vdc
h
fe
10
35
h
fe
50
250
C
obo
750
pF
t
on
4
μ
s
t
off
7
μ
s
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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| 2N3858 | SILICON TRANSISTORS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3847 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 20A 3PIN TO-63 - Bulk |
| 2N3848 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 200V 20A 3PIN TO-63 - Bulk |
| 2N3849 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 20A 3PIN TO-63 - Bulk |
| 2N384M | 制造商:n/a 功能描述:2N384M |
| 2N385 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | TO-5 |
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