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參數(shù)資料
| 型號(hào)： | 2N3811 |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 50 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 封裝： | HERMETIC SEALED, METAL CAN-8 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 209K |
| 代理商： | 2N3811 |
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. G
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3811
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 100 A
60
Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 60 Volts
VCB = 50 Volts
VCB = 50 Volts, TA = 150°C
10
A
nA
A
Emitter-Base Cutoff Current
IEBO1
IEBO2
VEB = 5 Volts
VEB = 4 Volts
10
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
hFE3-1/hFE3-2
IC = 1 A, VCE = 5 Volts
IC = 10 A, VCE = 5 Volts
IC = 100 A, VCE = 5 Volts
IC = 1 mA, VCE = 5 Volts
IC = 10 mA, VCE = 5 Volts
IC = 100 A, VCE = 5 Volts
TA = -55°C
IC = 100 A, VCE = 5 Volts
75
225
300
250
100
0.9
900
1.0
Base-Emitter Voltage
VBE
|VBE1-VBE2|1
|VBE1-VBE2|2
|VBE1-VBE2|3
VCE = 5 Volts, IC = 100 A
VCE = 5 Volts, IC = 10 A
VCE = 5 Volts, IC = 100 A
VCE = 5 Volts, IC = 10 mA
0.7
5
3
5
Volts
mVolts
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 100 A, IB = 10 A
IC = 1 mA, IB = 100 A
0.7
0.8
Volts
Collector-Emitter Saturation
Voltage
VCEsat1
VCEsat2
IC = 100 A, IB = 10 A
IC = 1 mA, IB = 100 A
0.20
0.25
Volts
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| 2N3811_02 | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon PNP Transistor |
| 2N3811A | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Dual Transistors |
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| 2N3811DCSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP |
| 2N3811JAN | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
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