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參數(shù)資料
| 型號： | 2N3810DCSM.MOD |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC2-6 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 630K |
| 代理商： | 2N3810DCSM.MOD |
SILICON DUAL MATCHED
PNP TRANSISTORS
2N3810DCSM
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 2873
Issue 2
Page 2 of 4
ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)CBO
Collector-Base
Breakdown Voltage
IC = -10A
IE = 0
-60
V(BR)CEO
(2)
Collector-Emitter
Breakdown Voltage
IC = -10mA
IB = 0
-60
V(BR)EBO
Emitter-Base
Breakdown Voltage
IE = -10A
IC = 0
-5
V
VCB = -50V
IE = 0
-10
nA
ICBO
Collector-Cut-Off
Current
TA = 150°C
-10
A
IEBO
Emitter-Cut-Off
Current
VEB = -4V
IC = 0
-20
nA
IC = -10A
VCE = -5V
100
IC = -100A
VCE = -5V
150
450
TA = -55°C
60
IC = -500A
VCE = -5V
150
450
IC = -1.0mA
VCE = -5V
150
450
hFE
(2)
Forward-current
transfer ratio
IC = -10mA
VCE = -5V
125
VBE
(2)
Base-Emitter Voltage
IC = -100A
VCE = -5V
-0.7
IC = -100A
IB = -10A
-0.7
VBE(sat)
(2)
Base-Emitter
Saturation Voltage
IC = -1.0mA
IB = = -100A
-0.8
V
IC = -100A
IB = -10A
-0.2
VCE(sat)
(2)
Collector-Emitter
Saturation Voltage
IC = -1.0mA
IB = = -100A
-0.25
ELECTRICAL MATCHING CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
2
FE
h
1
FE
h
(3)
Forward-current
transfer ratio (gain
ratio)
IC = -100A
VCE = -5V
0.9
1.0
VCE = -5V
IC = -10A to -10mA
5
|VBE1-VBE2|
Base-Emitter Voltage
Differential
VCE = -5V
IC = -100A
3
mV
VCE = -5V
IC = -100A
TA1 = 25°C
TA2 = -55°C
0.8
VCE = -5V
IC = -100A
|(VBE1-VBE2)TA|
Base-Emitter Voltage
Differential Change
Due To Temperature
TA1 = 25°C
TA2 = 125°C
1.0
mV
Not
Notes
es
(2)
Pulse Width ≤ 300us, δ ≤ 2%
(3)
The lower of the two readings is taken as hFE1
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