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參數(shù)資料
| 型號： | 2N3762L |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 92K |
| 代理商： | 2N3762L |
Data Sheet No. 2N3762L
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 10 A
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IE = 10 A
Collector-Emitter Cutoff Current
VEB = 2.0 V, VCE = 20 V
Collector-Emitter Cutoff Current
VEB = 2.0 V, VCE = 20 V, TA = 150
oC
Collector-Base Cutoff Current
VCB = 20 V
Emitter-Base Cutoff Current
VEB = 2.0 V
IEBO
---
200
nA
ICBO1
---
100
nA
ICEX2
---
150
A
nA
V
Electrical Characteristics
TC = 25
oC unless otherwise specified
V
V(BR)CBO
40
---
ICEX1
---
100
V(BR)CEO
40
---
V(BR)EBO
5.0
---
ON Characteristics
Symbol
Min
Max
Unit
Forward current Transfer Ratio
IC = 10 mA, VCE = 1.0 V
hFE1
35
---
IC = 150 mA, VCE = 1.0 V (pulse test)
hFE2
40
---
IC = 500 mA, VCE = 1.0 V (pulse test)
hFE3
40
140
---
IC = 1.0 A, VCE = 1.5 V (pulse test)
hFE4
30
120
---
IC = 1.5 A, VCE = 5.0 V (pulse test)
hFE5
30
---
IC = 5 mA, VCE = 1.0 V (pulsed), TA = -55
oC
hFE6
20
---
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1 mA (pulse test)
VCE(sat)1
---
0.1
V dc
IC = 150 mA, IC = 15 mA (pulse test)
VCE(sat)2
---
0.22
V dc
IC = 500 mA, IB = 50 mA (pulse test)
VCE(sat)3
---
0.50
V dc
IC = 1.0 A, IC = 100 mA (pulse test)
VCE(sat)4
---
0.90
V dc
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1 mA
VBE(sat)1
---
0.8
V dc
IC = 150 mA, IB = 15 mA (pulse test)
VBE(sat)2
---
1.0
V dc
IC = 500 mA, IB = 50 mA (pulse test)
VBE(sat)3
---
1.2
V dc
IC = 1.0 A, IB = 100 mA (pulse test)
VBE(sat)4
---
1.4
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
IC = 50 mA, VCE = 10 V, f = 100 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
CIBO
---
80
pF
COBO
---
25
---
|hFE|
1.8
6.0
Switching Characteristics
Per Figure 1, MIL-S-19500/396D
Pulse Delay Time
td
---
8
ns
Pulse Rise Time
tr
---
35
ns
Pulse Storage Time
ts
---
80
ns
Pulse Fall Time
tf
---
35
ns
Symbol
Min
Max
Unit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3763 | 功能描述:兩極晶體管 - BJT Small Signal RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3763L | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 1.5A 3PIN TO-5 - Bulk |
| 2N3764 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 40V 1.5A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 40V 1.5A 3PIN TO-46 - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 40V 1.5A 3-Pin TO-46 |
| 2N3765 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 1.5A 3PIN TO-46 - Bulk |
| 2N3766 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 60V 4A 3-Pin(2+Tab) TO-66 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 4A 3PIN TO-66 - Bulk 制造商:Microsemi 功能描述:Trans GP BJT NPN 60V 4A 3-Pin(2+Tab) TO-66 |
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