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參數(shù)資料
| 型號(hào)： | 2N3749 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP POWER SILICON TRANSISTOR |
| 中文描述： | 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-59 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 64K |
| 代理商： | 2N3749 |
2N2880, 2N3749 JAN SERIES
ELECTRICAL CHARACTERISTICS (Con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 5.0 Vdc
I
C
= 1.0 Adc, V
CE
= 2.0 Vdc
I
C
= 5.0 Adc, V
CE
= 5.0 Vdc
Base-Emitter Voltage Non-Saturated
V
CE
= 2.0 Adc, I
C
=1.0 Adc
Collector-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc
I
C
= 5.0 Adc, I
B
= 0.5 Adc
Base-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 10 Vdc, f = 10 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 5.0 Vdc, f = 1 kHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100
≤
f
≤
1.0 MHz
SAFE OPERATING AREA
DC Tests
T
C
= 100
0
C, t = 10 s
Test 1
V
CE
= 80 Vdc, I
C
= 80 mAdc
Test 2
V
CE
= 20 Vdc, I
C
= 1.5 Adc
h
FE
40
40
15
120
120
1.2
V
BE
Vdc
V
CE(sat)
0.25
1.5
1.2
Vdc
V
BE(sat)
Vdc
h
fe
3.0
12
h
fe
40
140
150
C
obo
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N375 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 |
| 2N3750 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 5A 3PIN TO-111 - Bulk |
| 2N3751 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 5A 3PIN TO-111 - Bulk |
| 2N3752 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 5A 3PIN TO-111 - Bulk 制造商:Rochester Electronics LLC 功能描述:NPN TRANSISTOR TO-111_ISO LAW - Bulk |
| 2N3756 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SILICON CONTROLLED RECTIFIER |
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