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參數(shù)資料
| 型號： | 2N3740A |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-66 |
| 封裝： | TO-66, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 97K |
| 代理商： | 2N3740A |
2N3740A
PNP Silicon
Power Transistors
Features
Medium-power amplifier applications
With TO-66 package
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
7.0
V
ICP
Peak Collector Current
10
A
IC
Collector Current
4.0
A
PC
Collector power dissipation
25
W
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=100mAdc, IB=0)
60
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=60Vdc, IE=0)
---
100
uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=7.0Vdc, IC=0)
---
0.5
mAdc
ON CHARACTERISTICS
hFE(1)
Forward Current Transfer ratio
(IC=100mAdc, VCE=1.0Vdc)
40
---
hFE(2)
Forward Current Transfer ratio
(IC=250mAdc, VCE=1.0Vdc)
30
---
hFE(3)
Forward Current Transfer ratio
(IC=500mAdc, VCE=1.0Vdc)
20
---
hFE(4)
Forward Current Transfer ratio
(IC=1.0Adc, VCE=1.0Vdc)
10
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=1.0Adc, IB=125mAdc)
---
0.6
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=250mAdc,VCE=1.0Vdc)
---
1.0
Vdc
fT
Transition Frequency
(VCE=10Vdc, IC=100mAdc,
f=1.0MHZ)
3.0
---
MH Z
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.531
.571
13.5
14.5
B
---
.728
---
18.5
C
.250
.340
6.35
8.63
D
.035
.043
0.90
1.10
E
---
.122
---
3.10
F
.050
.079
1.27
2.00
G
.190
.210
4.83
5.33
H
.122
3.10
K
.360
.413
9.15
10.50
L
.540
13.70
U
.898
.913
22.80
23.20
V
.150
.165
3.80
4.20
TO-66
A
E
D
C
K
H
V
U
L
G
B
1
2
PIN 1.
BASE
PIN 2.
EMITTER
F
CASE.
COLLECTOR
omponents
20736 Marilla
Street Chatsworth
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MCC
www.mccsemi.com
Revision: 2
2003/04/30
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3740AR | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO66 |
| 2N3740JANTX | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 60V 4A 3-Pin(2+Tab) TO-66 |
| 2N3740R | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:PNP |
| 2N3741 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 80V 4A 3-Pin(2+Tab) TO-66 制造商:Aeroflex / Metelics 功能描述:PNP POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 80V 4A 3PIN TO-66 - Bulk |
| 2N3741A | 制造商:Aeroflex / Metelics 功能描述:PNP POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 80V 4A 2PIN TO-66 - Bulk |
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