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參數(shù)資料
| 型號(hào)： | 2N3739 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 封裝： | TO-66, 2 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 2N3739 |
2N3739 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 10 Vdc
IC = 100 mAdc, VCE = 10 Vdc
IC = 250 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
hFE
30
40
25
10
200
Collector-Emitter Saturation Voltage
IC = 100 mAdc, IB = 10 mAdc
IC = 250 mAdc, IB = 25 mAdc
VCE(sat)
0.75
2.5
Vdc
Base-Emitter Voltage
IC = 100 mAdc, VCE = 10 Vdc
VBE
1.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz
h
FE
1.0
6.0
Forward Current Transfer Ratio
IC = 100 mAdc, VCE = 20 Vdc
hfe
35
300
Output Capacitance
VCB = 100 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
20
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 150 Vdc; IC = 500 mAdc, IB = 50 mAdc
ton
1.5
s
Turn-Off Time
VCC = 150 Vdc; IC = 500 mAdc, IB1 = IB2 = 50 mAdc
toff
3.5
s
SAFE OPERATING AREA
DC Tests
TC = 25
0C; t = 1.0 s; 1 cycle
Test 1
VCE = 80 Vdc, IC = 250 mAdc
Test 2
VCE = 290 Vdc, IC = 6.0 mAdc
(3) Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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| 2N3740 | 功能描述:兩極晶體管 - BJT Leaded Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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