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參數(shù)資料
| 型號： | 2N3737JX |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-46 |
| 封裝： | HERMETIC SEALED, METAL CAN-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 420K |
| 代理商： | 2N3737JX |
Rev. G
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
2N3737
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA
40
Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
VCB = 75 Volts
VCB = 30 Volts
10
250
A
nA
Collector-Emitter Cutoff Current
ICEX1
ICEX2
VCE = 30 Volts, VEB = 2 Volts
VCE = 30 Volts, VEB = 2 Volts,
TA = 150°C
200
250
nA
A
Emitter-Base Cutoff Current
IEBO1
IEBO2
VEB = 5 Volts
VEB = 4 Volts
10
100
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
IC = 10 mA, VCE = 1 Volts
IC = 150 mA, VCE = 1 Volts
IC = 500 mA, VCE = 1 Volts
IC = 1 A, VCE = 1.5 Volts
IC = 1.5 A, VCE = 5 Volts
IC = 500 mA, VCE = 1 Volts
TA = -55°C
35
40
20
15
140
80
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
VBEsat3
VBEsat4
IC = 10 mA, IB = 1 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 1 A, IB = 100 mA
0.9
0.8
1.0
1.2
1.4
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
VCEsat3
VCEsat4
IC = 10 mA, IB = 1 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 1 A, IB = 100 mA
0.2
0.3
0.5
0.9
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 10 Volts, IC = 50 mA,
f = 100 MHz
2.5
6.0
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
9
pF
Open Circuit Input Capacitance
CIBO
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
80
pF
Switching Characteristics
Delay Time
Rise Time
td
tr
VBE = 2 Volts, IC = 1 A,
IB = 100 mA
8
40
ns
Saturated Turn-Off Time
tOFF
IC = 1 A, IB1=IB2=100 mA
60
ns
Semicoa Corporation
Copyright
2010
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