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| 型號： | 2N3735 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 178K |
| 代理商： | 2N3735 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0173 Rev. 1 (101069)
Page 2 of 5
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector- Emitter Cutoff Current
VCE = 30Vdc, VEB = 2.0Vdc
VCE = 30Vdc, VEB = 2.0Vdc TA = +150°C
ICEX
200
250
nAdc
μAdc
Emitter-Base Cutoff Current
VEB = 5.0Vdc
VEB = 4.0Vdc
IEBO
10
100
μAdc
nAdc
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
hFE
IC = 10mAdc, VCE = 1.0Vdc
IC = 150mAdc, VCE = 1.0Vdc
IC = 500mAdc, VCE = 1.0Vdc
IC = 1.0Adc, VCE = 1.5Vdc
IC = 1.5Adc, VCE = 5.0Vdc
35
40
20
150
80
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 10mAdc, IB = 1.0mAdc
IC = 150mAdc, IB = 15.0mAdc
IC = 500mAdc, IB = 50.0mAdc
IC = 1.0Adc, IB = 100mAdc
0.2
0.3
0.5
0.9
Base-Emitter Saturation Voltage
VBE(sat)
Vdc
IC = 10mAdc, IB = 1.0mAdc
IC = 150mAdc, IB = 15.0mAdc
IC = 500mAdc, IB = 50.0mAdc
IC = 1.0Adc, IB = 100mAdc
0.8
1.0
1.2
1.4
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
|hfe|
IC = 50mAdc, VCE = 10Vdc, f = 100MHz
2.5
6.0
Delay Response
td
ηs
IC = 1.0Adc, VBE = 2Vdc, IB2= 100mA
VCC = 30Vdc
8
Turn-Off Time
toff
ηs
IC = 1.0Adc, IB1 = IB2 = 100mAdc, VCC = 30Vdc
60
Rise Time
tr
40
ηs
IC = 1.0Adc, VBE = 2Vdc, VCC = 30Vdc
Output Capacitance
Cobo
9
pF
VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz
Input Capacitance
Cibo
80
pF
VEB = 0.5Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz
(1) Pulse Test: Pulse Width = 300
μs, Duty Cycle ≤ 2.0%
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